X-On Electronics has gained recognition as a prominent supplier of SI1302DL-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1302DL-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1302DL-T1-E3 Vishay

SI1302DL-T1-E3 electronic component of Vishay
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See Product Specifications
Part No.SI1302DL-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: 30V 600mA 480mO@10V,600mA 280mW N Channel SC-70-3 MOSFETs ROHS
Surface mount Power MOSFET with up to 130V VDS max and 2.1A ID at VGS 4.5V.
Datasheet: SI1302DL-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5016 ea
Line Total: USD 0.5 
Availability - 113366
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4550
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 5
Multiples : 1
5 : USD 0.6341
10 : USD 0.4203
100 : USD 0.2958
500 : USD 0.2419
1000 : USD 0.2038
5000 : USD 0.1586

1142
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 5
Multiples : 5
5 : USD 0.3298
50 : USD 0.2636
150 : USD 0.2355
500 : USD 0.2001
3000 : USD 0.1763
6000 : USD 0.167

113366
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5016
10 : USD 0.3278
100 : USD 0.2299
500 : USD 0.198
1000 : USD 0.1826
3000 : USD 0.1298

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
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Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI1302DL-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1302DL-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI1302DL-T1-E3 is a dual N-channel enhancement mode FET designed for high side switching applications. It has a maximum drain-source voltage of 30V and a maximum continuous drain current of 3.5A. It feature low on-resistances (RDSon) for efficient switch operation, as well as low gate threshold voltage (VGSth) for fast switching. It is designed to have improved resilience against power surges, reverse drain-source voltage and electrostatic discharge (ESD). It also has a RoHS compliant lead-free construction and is packaged in a leadless SOIC-8 (Surface-Mount) package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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