X-On Electronics has gained recognition as a prominent supplier of SI1308EDL-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1308EDL-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1308EDL-T1-GE3 Vishay

SI1308EDL-T1-GE3 electronic component of Vishay
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Part No.SI1308EDL-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds 12V Vgs SC70-3
Datasheet: SI1308EDL-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1408 ea
Line Total: USD 0.7 
Availability - 29562
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
37830
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1274
6000 : USD 0.1197
12000 : USD 0.1184
18000 : USD 0.1149
30000 : USD 0.1138

2004
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.585
10 : USD 0.3539
25 : USD 0.3493
100 : USD 0.1976
250 : USD 0.1957
500 : USD 0.1864
1000 : USD 0.1309

32010
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1164
9000 : USD 0.1164
12000 : USD 0.1164
30000 : USD 0.1164
45000 : USD 0.1164

29562
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1408
50 : USD 0.1142
150 : USD 0.101
500 : USD 0.0911
3000 : USD 0.0722
6000 : USD 0.0682

60722
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4367
10 : USD 0.2684
100 : USD 0.1507
1000 : USD 0.1243
3000 : USD 0.1078
9000 : USD 0.1045
24000 : USD 0.1023

2293
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.518
10 : USD 0.3514
50 : USD 0.301
89 : USD 0.1918
244 : USD 0.182

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI1308EDL-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1308EDL-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI1308EDL-T1-GE3 is a surface-mount MOSFET made by Vishay. It has a 30V drain-source voltage (Vds) and a 12V gate-source voltage (Vgs) in the SC70 3-pin package. This transistor features low on-resistance Rds(on) and fast switching times, making it ideal for compact switching and protection applications, such as controlling the speed of motors, signal amplification, and load switching. The device is capable of handling power up to 635mW.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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