Si1330EDL Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 2.5 at V = 10 V 0.25 GS TrenchFET Power MOSFET 60 3 at V = 4.5 V 0.23 GS ESD Protected: 2000 V 8 at V = 3 V 0.05 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS P-Channel Driver - Notebook PC SOT-323 SC-70 (3-LEADS) - Servers D G 1 Marking Code 3 D KD XX Lot Traceability G and Date Code S 2 Part Code Top View Ordering Information: Si1330EDL-T1-E3 (Lead (Pb)-free) Si1330EDL-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 0.25 0.24 A a Continuous Drain Current (T = 150 C) I J D T = 70 C 0.2 0.19 A A Pulsed Drain Current I 1.0 DM a Continuous Source Current (Diode Conduction) I 0.26 0.23 S T = 25 C 0.31 0.28 A a Maximum Power Dissipation P W D T = 70 C 0.20 0.18 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 355 400 a R Maximum Junction-to-Ambient thJA Steady State 380 450 C/W Maximum Junction-to-Foot (Drain) Steady State R 285 340 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 72861 www.vishay.com S10-0721-Rev. B, 29-Mar-10 1 YYSi1330EDL Vishay Siliconix a SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 10 A 60 DS GS D V Gate-Threshold Voltage V V = V , I = 250 A 1 2.0 2.5 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 10 V 1 GSS DS GS V = 60 V, V = 0 V 1 A DS GS Zero Gate Voltage Drain Current I DSS V = 60 V, V = 0 V, T = 55 C 10 DS GS J V = 10 V, V = 7.5 V 0.5 GS DS b On-State Drain Current I = 4.5 V, V = 10 V 0.4 V A D(on) GS DS V = 3 V, V = 10 V 0.05 GS DS V = 10 V, I = 0.25 A 1.0 2.5 GS D b Drain-Source On-Resistance R V = 4.5 V, I = 0.2 A 1.4 3 DS(on) GS D V = 3 V, I = 0.025 A 3.0 8 GS D b Forward Transconductance g V = 10 V, I = 0.25 A 350 mS fs DS D Diode Forward Voltage V I = 0.23 A, V = 0 V 0.83 1.2 V SD S GS b Dynamic Total Gate Charge Q 0.4 0.6 g V = 10 V, V = 4.5 V DS GS Gate-Source Charge Q 0.11 nC gs I 0.25 A D Gate-Drain Charge Q 0.15 gd Gate Resistance R 173 g t 3.8 10 d(on) Turn-On Time V = 30 V, R = 150 DD L t 4.8 15 r I 0.2 A, V = 10 V ns D GEN t 12.820 d(off) R = 10 g Turn-Off Time t 9.6 15 f Notes: a. Pulse test: PW 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.0 1.0 T = - 55 C 6 V J V = 10 V, 7 V GS 25 C 0.8 5 V 0.8 125 C 0.6 0.6 4 V 0.4 0.4 0.2 0.2 3 V 0 0.0 012345 012345 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72861 2 S10-0721-Rev. B, 29-Mar-10 I - Drain Current (A) D I - Drain Current (A) D