Si1400DL Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Definition 0.150 at V = 4.5 V 1.7 GS TrenchFET Power MOSFET: 2.5 V Rated - 20 0.235 at V = 2.5 V 1.3 GS Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code ND XX 5 D 2 D Lot Traceability and Date Code Part Code G 3 4 S Top View Ordering Information: Si1400DL-T1-E3 (Lead (Pb)-free) Si1400DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 12 GS T = 25 C 1.7 1.6 A a Continuous Drain Current (T = 150 C) I J D T = 85 C 1.2 1.0 A A Pulsed Drain Current I 5 DM a Continuous Source Current (Diode Conduction) I 0.8 0.8 S T = 25 C 0.625 0.568 A a Maximum Power Dissipation P W D T = 85 C 0.40 0.295 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 165 200 a Maximum Junction-to-Ambient R thJA Steady State 180 220 C/W Maximum Junction-to-Foot (Drain) Steady State R 105 130 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 71179 www.vishay.com S10-0721-Rev. D, 29-Mar-10 1 YYSi1400DL Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.6 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 16 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 16 V, V = 0 V, T = 85 C 5 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 2 A D(on) DS GS V = 4.5 V, I = 1.7 A 0.123 0.150 GS D a Drain-Source On-State Resistance R DS(on) V = 2.5 V, I = 1.3 A 0.195 0.235 GS D a Forward Transconductance g V = 10 V, I = 1.7 A 5 S fs DS D a Diode Forward Voltage V I = 0.8 A, V = 0 V 0.78 1.1 V SD S GS b Dynamic Total Gate Charge Q 2.1 4.0 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 1.7 A 0.3 nC gs DS GS D Gate-Drain Charge Q 0.4 gd Turn-On Delay Time t 10 17 d(on) Rise Time t 30 50 r V = 10 V, R = 20 DD L I 1 A, V = 4.5 V, R = 6 Turn-Off Delay Time t 14D GEN g 25 ns d(off) Fall Time t 815 f Source-Drain Reverse Recovery Time t I = 0.8 A, dI/dt = 100 A/s 30 50 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 5 5 2.5 V V = 4.5 V thru 3 V GS 4 4 3 3 2 2 2 V T = 125 C C 1 1 25 C -55 C 1.5 V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V Gate-to-So- urce Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71179 2 S10-0721-Rev. D, 29-Mar-10 I - Drain Current (A) D I - Drain Current (A) D