X-On Electronics has gained recognition as a prominent supplier of SI1300BDL-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1300BDL-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1300BDL-T1-E3 Vishay

SI1300BDL-T1-E3 electronic component of Vishay
SI1300BDL-T1-E3 Vishay
SI1300BDL-T1-E3 MOSFETs
SI1300BDL-T1-E3  Semiconductors

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Part No. SI1300BDL-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 0.4A 0.2W 0.85ohm 4.5V
Datasheet: SI1300BDL-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1819 ea
Line Total: USD 0.18 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 1
Multiples : 1
1 : USD 0.1819
5 : USD 0.1797
50 : USD 0.1709
250 : USD 0.1512
1000 : USD 0.1348
2500 : USD 0.1271

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Configuration
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Rise Time
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Typical Turn-Off Delay Time
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We are delighted to provide the SI1300BDL-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1300BDL-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si1300BDL Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.85 at V = 4.5 V 0.4 TrenchFET Power MOSFET GS 20 0.335 100 % R Tested 1.08 at V = 2.5 V 0.35 g GS Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) D G 1 Marking Code 3 D KE XX G Lot Traceability and Date Code S 2 Part Code S Top View Ordering Information: Si1300BDL-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si1300BDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS T = 25 C 0.4 C T = 70 C 0.32 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 0.37 A b, c T = 70 C 0.30 A A Pulsed Drain Current I 0.5 DM T = 25 C 0.18 C Continuous Source-Drain Diode Current I S b, c = 25 C 0.14 T A T = 25 C 0.2 C T = 70 C 0.14 C Maximum Power Dissipation P W D T = 25 C 0.19 A b, c T = 70 C 0.12 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 5 s R 540 670 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 450 570 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 360 C/W. Document Number: 73557 www.vishay.com S11-2000-Rev. D, 10-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Y Y Si1300BDL Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V DS GS D V Temperature Coefficient V /T 20 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.8 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = 20 V, V = 0 V 100 nA DS GS Zero Gate Voltage Drain Current I DSS V = 20 V, V = 0 V, T = 55 C 5 A DS GS J V 5 V, V = 4.5 V 0.4 DS GS a On-State Drain Current I A D(on) V 5 V, V = 2.5 V 0.12 DS GS V = 4.5 V, I = 0.25 0.65 0.85 GS D a Drain-Source On-State Resistance R DS(on) V = 2.5 V, I = 0.15 0.85 1.08 GS D b Dynamic Input Capacitance C 35 iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz 13 pF oss DS GS Reverse Transfer Capacitance C 4 rss V = 10 V, V = 4.5 V, I = 0.4 560 840 DS GS D Total Gate Charge Q g 335 503 pC Gate-Source Charge Q V = 10 V, V = 2.5 V, I = 0.35 98 gs DS GS D Gate-Drain Charge Q 85 gd Gate Resistance R f = 1 MHz 1.5 7 12 g Turn-On Delay Time t 712 d(on) Rise Time t 10 15 r V = 10 V, R = 25 DD L ns I 0.4 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 81D GEN g 3 d(off) Fall Time t 712 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 0.18 S C A a Pulse Diode Forward Current I 0.4 SM Body Diode Voltage V I = 0.05 A 0.7 1.2 V SD S Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73557 2 S11-2000-Rev. D, 10-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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