Si1300BDL Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.85 at V = 4.5 V 0.4 TrenchFET Power MOSFET GS 20 0.335 100 % R Tested 1.08 at V = 2.5 V 0.35 g GS Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) D G 1 Marking Code 3 D KE XX G Lot Traceability and Date Code S 2 Part Code S Top View Ordering Information: Si1300BDL-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si1300BDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS T = 25 C 0.4 C T = 70 C 0.32 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 0.37 A b, c T = 70 C 0.30 A A Pulsed Drain Current I 0.5 DM T = 25 C 0.18 C Continuous Source-Drain Diode Current I S b, c = 25 C 0.14 T A T = 25 C 0.2 C T = 70 C 0.14 C Maximum Power Dissipation P W D T = 25 C 0.19 A b, c T = 70 C 0.12 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 5 s R 540 670 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 450 570 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 360 C/W. Document Number: 73557 www.vishay.com S11-2000-Rev. D, 10-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Y Y Si1300BDL Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V DS GS D V Temperature Coefficient V /T 20 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.8 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = 20 V, V = 0 V 100 nA DS GS Zero Gate Voltage Drain Current I DSS V = 20 V, V = 0 V, T = 55 C 5 A DS GS J V 5 V, V = 4.5 V 0.4 DS GS a On-State Drain Current I A D(on) V 5 V, V = 2.5 V 0.12 DS GS V = 4.5 V, I = 0.25 0.65 0.85 GS D a Drain-Source On-State Resistance R DS(on) V = 2.5 V, I = 0.15 0.85 1.08 GS D b Dynamic Input Capacitance C 35 iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz 13 pF oss DS GS Reverse Transfer Capacitance C 4 rss V = 10 V, V = 4.5 V, I = 0.4 560 840 DS GS D Total Gate Charge Q g 335 503 pC Gate-Source Charge Q V = 10 V, V = 2.5 V, I = 0.35 98 gs DS GS D Gate-Drain Charge Q 85 gd Gate Resistance R f = 1 MHz 1.5 7 12 g Turn-On Delay Time t 712 d(on) Rise Time t 10 15 r V = 10 V, R = 25 DD L ns I 0.4 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 81D GEN g 3 d(off) Fall Time t 712 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 0.18 S C A a Pulse Diode Forward Current I 0.4 SM Body Diode Voltage V I = 0.05 A 0.7 1.2 V SD S Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73557 2 S11-2000-Rev. D, 10-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000