New Product Si1317DL Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 c V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.150 at V = - 4.5 V - 1.4 GS TrenchFET Power MOSFET - 20 0.192 at V = - 2.5 V - 1.3 4.3 nC GS 100 % R Tested g 0.270 at V = - 1.8 V - 1.1 Compliant to RoHS Directive 2002/95/EC GS APPLICATIONS Load Switch DC/DC Converters SOT-323 SC-70 (3-LEADS) G 1 S 3 D G S 2 Top View Si1317DL (LK)* D * Marking Code Ordering Information: Si1317DL-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 8 GS T = 25 C - 1.4 C T = 70 C - 1.1 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 1.4 A a, b T = 70 C - 1.1 A A I - 6 Pulsed Drain Current DM T = 25 C - 0.4 C I Continuous Source-Drain Diode Current S T = 25 C - 0.3 A T = 25 C 0.5 C T = 70 C 0.3 C Maximum Power Dissipation P W D a, b T = 25 C 0.4 A a, b T = 70 C 0.3 A Operating Junction and Storage Temperature Range T , T - 50 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Based on T = 25 C. C Document Number: 67194 www.vishay.com S10-2764-Rev. A, 29-Nov-10 1New Product Si1317DL Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b Maximum Junction-to-Ambient t 10 s R 250 300 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 225 270 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 360 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 14 DS DS J I = - 250 A mV/C D V /T 2.4 V Temperature Coefficient GS(th) J GS(th) Gate-Source Threshold Voltage V - 0.45 - 0.8 V V = V , I = - 250 A GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I - 5 V, V = - 4.5 V - 2 A V D(on) DS GS 0.125 0.150 V = - 4.5 V, I = - 1.4 A GS D a Drain-Source On-State Resistance R V = - 2.5 V, I = - 1.2 A 0.160 0.192 DS(on) GS D V = - 1.8 V, I = - 0.3 A 0.180 0.270 GS D a Forward Transconductance g V = - 5 V, I = - 1.4 A 5S fs DS D b Dynamic Input Capacitance C 272 iss Output Capacitance C 55V = - 10 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 44 rss V = - 10 V, V = - 4.5 V, I = - 1.4 A 4.3 6.5 DS GS D Total Gate Charge Q g 2.7 4.1 nC Gate-Source Charge Q V = - 10 V, V = - 2.5 V, I = - 1.4 A 0.7 gs DS GS D Gate-Drain Charge Q 1.0 gd Gate Resistance R f = 1 MHz 1.4 7 14 g Turn-On Delay Time t 12 20 d(on) Rise Time t 20 30 V = - 10 V, R = 9.1 r DD L I - 1.1 A, V = - 4.5 V, R = 1 Turn-Off DelayTime t 2335 D GEN g d(off) Fall Time t 918 f ns Turn-On Delay Time t 510 d(on) Rise Time t 10 20 V = - 10 V, R = 9.1 r DD L I - 1.1 A, V = - 8 V, R = 1 Turn-Off DelayTime t 1827 D GEN g d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 0.4 S C A a Pulse Diode Forward Current I - 6 SM Body Diode Voltage V I = - 0.7 A - 0.8 - 1.2 V SD F Body Diode Reverse Recovery Time t 18 27 ns rr Body Diode Reverse Recovery Charge Q 714 nC rr I = - 0.7 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 7 a ns Reverse Recovery Rise Time t 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67194 2 S10-2764-Rev. A, 29-Nov-10