New Product Si1401EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.034 at V = - 4.5 V - 4 GS TrenchFET Power MOSFET 0.046 at V = - 2.5 V - 4 Typical ESD Performance 1500 V GS - 12 14.1 nC 100 % R Tested 0.070 at V = - 1.8 V - 4 GS g Compliant to RoHS Directive 2002/95/EC 0.110 at V = - 1.5 V - 4 GS APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable SOT-363 Devices SC-70 (6-LEADS) S - Cellular Phone - DSC D 1 6 D - Portable Game Console - MP3 5 D 2 D - GPS Marking Code G R B P X G 3 4 S Part code X X X Lot Traceability Top View and Date code D Ordering Information: Si1401EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 12 DS V Gate-Source Voltage V 10 GS a T = 25 C - 4 C a T = 70 C - 4 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 4 A a, b, c T = 70 C A - 4 A Pulsed Drain Current I - 25 DM T = 25 C - 2.3 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.3 A T = 25 C 2.8 C T = 70 C 1.8 C Maximum Power Dissipation P W D b, c T = 25 C 1.6 A b, c T = 70 C 1.0 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 60 80 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 C/W. Document Number: 70080 www.vishay.com S10-1537-Rev. A, 19-Jul-10 1New Product Si1401EDH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 12 V DS GS D V Temperature Coefficient V /T - 5.2 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.4 - 1 V GS(th) DS GS D V = 0 V, V = 8 V 5 DS GS Gate-Source Leakage I GSS V = 0 V, V = 4.5 V 1 DS GS A V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I DSS V = - 12 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 15 A D(on) DS GS V = - 4.5 V, I = - 5.5 A 0.028 0.034 GS D V = - 2.5 V, I = - 4.8 A 0.038 0.046 GS D a Drain-Source On-State Resistance R DS(on) V = - 1.8 V, I = - 1.4 A 0.053 0.070 GS D V = - 1.5 V, I = - 0.9 A 0.072 0.110 GS D a Forward Transconductance g V = - 6 V, I = - 5.5 A 16 S fs DS D b Dynamic Total Gate Charge V = - 6 V, V = - 8 V, I = - 5.5 A 24 36 DS GS D Q g 14.1 22 Gate-Source Charge nC Q V = - 6 V, V = - 4.5 V, I = - 5.5 A 1.9 gs DS GS D Gate-Drain Charge Q 4 gd Gate Resistance R f = 1 MHz 0.08 0.42 0.84 k g Turn-On Delay Time t 160 240 d(on) Rise Time t 420 630 r V = - 6 V, R = 1.4 DD L I - 4.4 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 1325D GEN g 1990 d(off) Fall Time t 985 1480 f ns Turn-On Delay Time t 72 110 d(on) Rise Time t 210 320 V = - 6 V, R = 1.4 r DD L I - 4.4 A, V = - 8 V, R = 1 Turn-Off Delay Time t 2100D GEN g 3150 d(off) Fall Time t 1015 1525 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 2.3 S C A Pulse Diode Forward Current I - 25 SM Body Diode Voltage V I = - 5.5 A, V = 0 V - 0.85 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 27 50 ns rr Body Diode Reverse Recovery Charge Q 12 25 nC rr I = - 5.5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 10 a ns Reverse Recovery Rise Time t 17 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70080 2 S10-1537-Rev. A, 19-Jul-10