X-On Electronics has gained recognition as a prominent supplier of SI1403CDL-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1403CDL-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1403CDL-T1-GE3 Vishay

SI1403CDL-T1-GE3 electronic component of Vishay
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Part No.SI1403CDL-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -20V Vds 12V Vgs SC70-6
Datasheet: SI1403CDL-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 3000
Multiples : 3000
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3000 : USD 0.1247
6000 : USD 0.1166
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MOQ : 71
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We are delighted to provide the SI1403CDL-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1403CDL-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1403CDL Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 c V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.140 at V = - 4.5 V - 2.1 GS TrenchFET Power MOSFET - 20 0.160 at V = - 3.6 V - 1.9 4 nC GS 100 % R Tested g 0.222 at V = - 2.5 V - 1.6 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) DC/DC Converters S D 1 6 D Marking Code OE XX 5 D 2 D G Lot Traceability and Date Code Part G 3 4 S Code Top View D Ordering Information: Si1403CDL-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 12 GS T = 25 C - 2.1 C T = 70 C C - 1.6 I Continuous Drain Current (T = 150 C) D J a, b T = 25 C A - 1.6 a, b T = 70 C A A - 1.3 I Pulsed Drain Current (10 s Pulse Width) - 5 DM T = 25 C - 1.75 C I Continuous Source-Drain Diode Current S a, b T = 25 C A - 0.5 T = 25 C 0.9 C T = 70 C 0.6 C P W Maximum Power Dissipation D a, b T = 25 C A 0.6 a, b T = 70 C A 0.4 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, d t 5 s R 180 220 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 115 140 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. c. Based on T = 25 C. C d. Maximum under steady state conditions is 230 C/W. Document Number: 67093 www.vishay.com S10-2541-Rev. A, 08-Nov-10 1 YYSi1403CDL Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 15 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.9 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.6 - 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage - 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 4.5 V - 2 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 1.6 A 0.116 0.140 GS D a R V = - 3.6 V, I = - 1.5 A 0.133 0.160 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 0.5 A 0.177 0.222 GS D a g V = - 10 V, I = - 1.6 A 5S Forward Transconductance fs DS D b Dynamic Input Capacitance C 281 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 73 pF oss DS GS C Reverse Transfer Capacitance 54 rss Q Total Gate Charge 48 g Q V = - 10 V, V = - 4.5 V, I = - 1.6 A Gate-Source Charge 0.7 nC gs DS GS D Q Gate-Drain Charge 1.4 gd R Gate Resistance f = 1 MHz 2 7 14 g t Turn-On Delay Time 18 27 d(on) t Rise Time V = - 10 V, R = 7.7 17 26 r DD L I - 1.3 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 19 30 D GEN g d(off) t Fall Time 918 f ns Turn-On Delay Time t 510 d(on) t Rise Time V = - 10 V, R = 7.7 10 20 r DD L I - 1.3 A, V = - 10 V, R = 1 Turn-Off Delay Time t 17 26 D GEN g d(off) t Fall Time 714 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I - 1.75 S C A I Pulse Diode Forward Current - 5 SM V I = - 1.3 A, V = 0 V Body Diode Voltage - 0.83 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 12 20 ns rr Q Body Diode Reverse Recovery Charge 48 nC rr I = - 2.0 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 7 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67093 2 S10-2541-Rev. A, 08-Nov-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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