X-On Electronics has gained recognition as a prominent supplier of SI1424EDH-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1424EDH-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1424EDH-T1-GE3 Vishay

SI1424EDH-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI1424EDH-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V Vds 8V Vgs SC70-6
Datasheet: SI1424EDH-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.451 ea
Line Total: USD 0.45 
Availability - 24040
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
23
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2176
10 : USD 0.2119
30 : USD 0.208
100 : USD 0.2042

24040
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.451
10 : USD 0.3014
100 : USD 0.1584
1000 : USD 0.1408
3000 : USD 0.11
9000 : USD 0.1056
24000 : USD 0.0979
45000 : USD 0.0957

   
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We are delighted to provide the SI1424EDH-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1424EDH-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1424EDH www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES SC-70 (6 leads) SOT-363 Single TrenchFET power MOSFET S 4 Typical ESD protection 4000 V D 5 100 % R tested g D 6 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 G APPLICATIONS 2 D D 1 Portable devices D - Load switch Top View - Battery switch Marking code: AQ R PRODUCT SUMMARY G V (V) 20 DS R max. ( ) at V = 4.5 V 0.033 DS(on) GS R max. ( ) at V = 2.5 V 0.038 DS(on) GS R max. ( ) at V = 1.8 V 0.045 DS(on) GS R max. ( ) at V = 1.5 V 0.070 DS(on) GS Q typ. (nC) 6 g S a I (A) 4 D Configuration Single ORDERING INFORMATION Package SC-70 Lead (Pb)-free and halogen-free Si1424EDH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 20 DS V Gate-source voltage V 8 GS a T = 25 C 4 C a T = 70 C 4 C Continuous drain current (T = 150 C) I J D a, b, c T = 25 C 4 A a, b, c T = 70 C 4 A A Pulsed drain current I 16 DM a T = 25 C 2.3 C Continuous source-drain diode current I S b, c T = 25 C 1.3 A T = 25 C 2.8 C T = 70 C 1.8 C Maximum power dissipation P W D b, c T = 25 C 1.56 A b, c T = 70 C 1 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, d Maximum junction-to-ambient t 5 s R 60 80 thJA C/W Maximum junction-to-foot (drain) Steady state R 34 45 thJF Notes a. Package limited, T = 25 C C b. Surface mounted on 1 x 1 FR4 board c. t = 5 s d. Maximum under steady state conditions is 125 C/W S21-0687-Rev. C, 28-Jun-2021 Document Number: 67198 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si1424EDH www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 20 - - V DS GS D V temperature coefficient V /T -18 - DS DS J I = 250 A mV/C D V temperature coefficient V /T --2.5 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = 250 A 0.4 - 1 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 1.5 DS GS Gate-source leakage I GSS V = 0 V, V = 8 V - - 25 DS GS A V = 20 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I DSS V = 20 V, V = 0 V, T = 55 C - - 10 DS GS J a On-state drain current I V 5 V, V = 4.5 V 15 - - A D(on) DS GS V = 4.5 V, I = 5 A - 0.027 0.033 GS D V = 2.5 V, I = 1 A - 0.031 0.038 GS D a Drain-source on-state resistance R DS(on) V = 1.8 V, I = 1 A - 0.035 0.045 GS D V = 1.5 V, I = 0.5 A - 0.040 0.070 GS D a Forward transconductance g V = 10 V, I = 3 A - 25 - S fs DS D b Dynamic V = 10 V, V = 8 V, I = 7.1 A - 11.5 18 DS GS D Total gate charge Q g -6 9 nC Gate-source charge Q V = 10 V, V = 4.5 V, I = 7.1 A -0.8 - gs DS GS D Gate-drain charge Q -1.6- gd Gate resistance R f = 1 MHz 460 2300 4600 g Turn-on delay time t - 0.3 0.45 d(on) Rise time t -0.6 0.9 r V = 10 V, R = 1.8 DD L I 5.7 A, V = 4.5 V, R = 1 Turn-off delay time t -3D GEN g.86 d(off) Fall time t -1.7 2.6 f s Turn-on delay time t -0.15 0.25 d(on) Rise time t - 0.3 0.45 r V = 10 V, R = 1.8 DD L I 5.7 A, V = 10 V, R = 1 Turn-off delay time t -5D GEN g.69 d(off) Fall time t -1.6 2.5 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 2.3 S C A Pulse diode forward current I -- 16 SM Body diode voltage V I = 5.7 A, V = 0 V - 0.85 1.2 V SD S GS Body diode reverse recovery time t -15 30 ns rr Body diode reverse recovery charge Q -7.5 15 nC rr I = 5.7 A, di/dt = 100 A/s, F T = 25 C Reverse recovery fall time t J -8 - a ns Reverse recovery rise time t -15 - b Notes a. Pulse test pulse width 300 s, duty cycle 2% b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0687-Rev. C, 28-Jun-2021 Document Number: 67198 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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