New Product Si1442DH Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () (Max.) I (A) Q (Typ.) 100 % R Tested DS DS(on) D g g Material categorization: 0.020 at V = 4.5 V 4 GS For definitions of compliance please see 12 0.024 at V = 2.5 V 4 13.1 nC GS www.vishay.com/doc 99912 0.030 at V = 1.8 V 4 GS APPLICATIONS Load Switch and Battery Switch for Portable Devices SOT-363 DC/DC Converters SC-70 (6-LEADS) Low On-Resistance for Low Voltage Drop D 1 6 D D 5 D 2 D Marking Code G 3 4 S AT XX G Lot Traceability and Date Code Top View Part Code Ordering Information: S Si1442DH-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage 12 DS V Gate-Source Voltage V 8 GS a T = 25 C 4 F a T = 70 C 4 F Continuous Drain Current (T = 150 C) I J D a, b, c 4 T = 25 C A a, b, c T = 70 C 4 A A Pulsed Drain Current (t = 300 s) I 20 DM T = 25 C 2.3 F Continuous Source-Drain Diode Current I S b, c T = 25 C 1.3 A T = 25 C 2.8 F T = 70 C 1.8 F Maximum Power Dissipation P W D b, c T = 25 C 1.56 A b, c 1 T = 70 C A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 5 s R 60 80 thJA C/W Steady State R 34 45 Maximum Junction-to-Foot (Drain) thJF Notes: a. T = 25 C, package limited. F b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 C/W. Document Number: 63772 For technical support, please contact: pmostechsupport vishay.com www.vishay.com S12-0546-Rev. A, 12-Mar-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYNew Product Si1442DH Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 5 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.7 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 15 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 6 A 0.017 0.020 GS D a R V = 2.5 V, I = 5 A 0.019 0.024 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 3 A 0.023 0.030 GS D a g V = 6 V, I = 6 A 33 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1010 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 323 pF oss DS GS C Reverse Transfer Capacitance 305 rss V = 6 V, V = 8 V, I = 7 A 21.8 33 DS GS D Q Total Gate Charge g 13.1 20 nC Q Gate-Source Charge V = 6 V, V = 4.5 V, I = 7 A 2 gs DS GS D Q Gate-Drain Charge 2.7 gd R Gate Resistance f = 1 MHz 0.3 1.6 3.2 g t Turn-On Delay Time 816 d(on) t Rise Time V = 6 V, R = 1.07 13 20 r DD L I 5.6 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 22 33 D GEN g d(off) t Fall Time 918 f ns Turn-On Delay Time t 612 d(on) t Rise Time V = 6 V, R = 1.07 12 18 r DD L I 5.6 A, V = 8 V, R = 1 Turn-Off Delay Time t 22 33 D GEN g d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I 4 S C A I Pulse Diode Forward Current 20 SM V I = 5.6 A, V = 0 V Body Diode Voltage 0.75 1.2 V SD S GS t Body Diode Reverse Recovery Time 19 30 ns rr Q Body Diode Reverse Recovery Charge 714 nC rr I = 5.6 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns t Reverse Recovery Rise Time 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical support, please contact: pmostechsupport vishay.com Document Number: 63772 2 S12-0546-Rev. A, 12-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000