X-On Electronics has gained recognition as a prominent supplier of SI1471DH-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1471DH-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1471DH-T1-GE3 Vishay

SI1471DH-T1-GE3 electronic component of Vishay
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Part No.SI1471DH-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET -30V -2.7A 2.78W
Datasheet: SI1471DH-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.3052
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.845
10 : USD 0.7423
100 : USD 0.5691
N/A

Obsolete
0

Multiples : 3000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5015
10 : USD 0.6599
100 : USD 0.424
500 : USD 0.3496
1000 : USD 0.3057
3000 : USD 0.3043
N/A

Obsolete
   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the SI1471DH-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1471DH-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1471DH Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 c V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.100 at V = - 10 V - 2.7 GS TrenchFET Power MOSFET - 30 0.120 at V = - 4.5 V - 2.7 6.5 nC GS Compliant to RoHS Directive 2002/95/EC 0.175 at V = - 2.5 V - 2.7 GS APPLICATIONS SOT-363 Load Switch for Portable Devices SC-70 (6-LEADS) D 1 6 D Marking Code S BN XX 5 D 2 D Lot Traceability and Date Code G Part G 3 4 S Code Top View D Ordering Information: Si1471DH-T1-E3 (Lead (Pb)-free) Si1471DH-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 12 GS c T = 25 C C - 2.7 c T = 70 C C - 2.7 a, b I Continuous Drain Current (T = 150 C) D J a, b T = 25 C A - 2.8 a, b T = 70 C A A - 2.3 I Pulsed Drain Current (10 s Pulse Width) DM - 8 T = 25 C C - 2.3 a, b I Continuous Source-Drain Diode Current S a, b = 25 C T - 1.25 A T = 25 C 2.78 C T = 70 C 1.78 C a, b P W Maximum Power Dissipation D a, b T = 25 C 1.5 A a, b T = 70 C A 1 , T Operating Junction and Storage Temperature Range T - 55 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, d R t 5 s 60 80 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 34 45 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. c. Package limited. d. Maximum under steady state conditions is 125 C/W. Document Number: 74468 www.vishay.com S10-0646-Rev. C, 22-Mar-10 1 YYSi1471DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 29 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.1 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.6 - 1.6 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage - 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 4.5 V - 3 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 2.0 A 0.080 0.100 GS D a R V = - 4.5 V, I = - 1.8 A 0.095 0.120 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 1.5 A 0.140 0.175 GS D a g V = - 10 V, I = - 2.0 A 6S Forward Transconductance fs DS D b Dynamic Input Capacitance C 445 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 68 pF oss DS GS C Reverse Transfer Capacitance 55 rss Q Total Gate Charge 6.5 9.8 g Q V = - 15 V, V = - 4.5 V, I = - 2.5 A Gate-Source Charge 1.0 nC gs DS GS D Q Gate-Drain Charge 2.2 gd R Gate Resistance f = 1 MHz 10 g t Turn-On Delay Time 22 33 d(on) t Rise Time V = - 15 V, R = 7.5 48 72 r DD L I - 2 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 23 35 D GEN g d(off) t Fall Time 17 26 f ns Turn-On Delay Time t 48 d(on) t Rise Time V = - 15 V, R = 7.5 20 30 r DD L I - 2 A, V = - 10 V, R = 1 Turn-Off Delay Time t 20 30 D GEN g d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I - 1.6 S C A I Pulse Diode Forward Current - 6.5 SM V I = - 2 A, V = 0 V Body Diode Voltage - 0.83 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 30 ns rr Q Body Diode Reverse Recovery Charge 12 20 nC rr I = - 2.0 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns t Reverse Recovery Rise Time 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74468 2 S10-0646-Rev. C, 22-Mar-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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