Si1499DH Vishay Siliconix P-Channel 1.2 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 c V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.078 at V = - 4.5 V - 1.6 GS TrenchFET Power MOSFET 0.095 at V = - 2.5 V - 1.6 GS Ultra-Low On-Resistance - 8 0.115 at V = - 1.8 V - 1.6 10.5 nC GS Compliant to RoHS Directive 2002/95/EC 0.153 at V = - 1.5 V - 1.6 GS b APPLICATIONS 0.424 at V = - 1.2 V - 1.6 GS Load Switch for Portable Devices SOT-363 - Guaranteed Operation at V = 1.2 V SC-70 (6-LEADS) GS Critical for Optimized Design and Longer Battery Life D 1 6 D Marking Code S BI XX 5 D 2 D Lot Traceability and Date Code G Part G 3 4 S Code Top View D Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si1499DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 8 DS V Gate-Source Voltage V 5 GS c T = 25 C -1.6 C c T = 70 C - 1.6 C a, b Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 1.6 A a, b, c T = 70 C - 1.6 A A c Pulsed Drain Current (10 s Pulse Width) I - 6.5 DM c T = 25 C - 1.6 C a, b Continuous Source-Drain Diode Current I S a, b T = 25 C - 1.3 A T = 25 C 2.78 C T = 70 C 1.78 C a, b Maximum Power Dissipation P W D a, b T = 25 C 2.5 A a, b T = 70 C 1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, d Maximum Junction-to-Ambient t 5 s R 60 80 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. c. Package limited. d. Maximum under steady state conditions is 125 C/W. Document Number: 73338 www.vishay.com S10-0792-Rev. F, 05-Apr-10 1 YYSi1499DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 8 V DS GS D V Temperature Coefficient V /T - 9 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T - 2.2 GS(th) GS(th) J V = V , I = - 250 A - 0.35 - 0.8 DS GS D Gate-Source Threshold Voltage V V GS(th) V = V , I = 5 mA - 0.55 DS GS D V = 0 V, V = 5 V 100 nA Gate-Source Leakage I GSS DS GS V = - 8 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V 5 V, V = - 4.5 V - 6.5 A D(on) DS GS V = - 4.5 V, I = - 2.0 A 0.0622 0.078 GS D V = - 2.5 V, I = - 1.9 A 0.078 0.095 GS D a Drain-Source On-State Resistance R V = - 1.8 V, I = - 0.8 A 0.094 0.115 DS(on) GS D V = - 1.5 V, I = - 0.5 A 0.118 0.153 GS D V = - 1.2 V, I = - 0.100 A 0.424 GS D a Forward Transconductance g V = - 4 V, I = - 2.0 A 8 S fs DS D b Dynamic Input Capacitance C 650 iss Output Capacitance C V = - 4 V, V = 0 V, f = 1 MHz 220 pF oss DS GS Reverse Transfer Capacitance C 122 rss Total Gate Charge Q 10.5 16 g Gate-Source Charge Q 1.3V = - 4 V, V = - 4.5 V, I = - 1.6 A nC gs DS GS D Gate-Drain Charge Q 1.9 gd Gate Resistance R f = 1 MHz 9.5 g Turn-On Delay Time t 914 d(on) Rise Time t 40 60 r V = - 4 V, R = 2 DD L I - 2 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 50D GEN g 75 d(off) Fall Time t 60 90 f ns Turn-On Delay Time t 815 d(on) Rise Time t 40 60 r V = - 4 V, R = 2 DD L I - 2 A, V = - 8 V, R = 1 Turn-Off Delay Time t 46D GEN g 70 d(off) Fall Time t 60 90 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 1.6 S C A Pulse Diode Forward Current I - 6.5 SM Body Diode Voltage V I = - 2.4 A, V = 0 V - 0.7 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 25 38 ns rr Body Diode Reverse Recovery Charge Q 711 nC rr I = - 2.0 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 9 a ns Reverse Recovery Rise Time t 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73338 2 S10-0792-Rev. F, 05-Apr-10