X-On Electronics has gained recognition as a prominent supplier of SI1499DH-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1499DH-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1499DH-T1-GE3 Vishay

SI1499DH-T1-GE3 electronic component of Vishay
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Part No.SI1499DH-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET -8V -1.6A 2.78W
Datasheet: SI1499DH-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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MOQ : 3000
Multiples : 3000
3000 : USD 0.3272
6000 : USD 0.3239
9000 : USD 0.3207
12000 : USD 0.3175
15000 : USD 0.3144
24000 : USD 0.3112
30000 : USD 0.3081
45000 : USD 0.305
75000 : USD 0.3019
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MOQ : 3000
Multiples : 3000
3000 : USD 0.3389
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MOQ : 1
Multiples : 1
1 : USD 0.8458
10 : USD 0.7189
100 : USD 0.5512
500 : USD 0.4358
1000 : USD 0.3486
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MOQ : 3000
Multiples : 3000
3000 : USD 0.286
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MOQ : 1
Multiples : 1
1 : USD 0.603
10 : USD 0.5094
100 : USD 0.3645
500 : USD 0.2976
1000 : USD 0.2742
3000 : USD 0.2408
6000 : USD 0.2385
9000 : USD 0.2363
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MOQ : 27
Multiples : 1
27 : USD 0.258
100 : USD 0.2342
250 : USD 0.2296
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the SI1499DH-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1499DH-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1499DH Vishay Siliconix P-Channel 1.2 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 c V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.078 at V = - 4.5 V - 1.6 GS TrenchFET Power MOSFET 0.095 at V = - 2.5 V - 1.6 GS Ultra-Low On-Resistance - 8 0.115 at V = - 1.8 V - 1.6 10.5 nC GS Compliant to RoHS Directive 2002/95/EC 0.153 at V = - 1.5 V - 1.6 GS b APPLICATIONS 0.424 at V = - 1.2 V - 1.6 GS Load Switch for Portable Devices SOT-363 - Guaranteed Operation at V = 1.2 V SC-70 (6-LEADS) GS Critical for Optimized Design and Longer Battery Life D 1 6 D Marking Code S BI XX 5 D 2 D Lot Traceability and Date Code G Part G 3 4 S Code Top View D Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si1499DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 8 DS V Gate-Source Voltage V 5 GS c T = 25 C -1.6 C c T = 70 C - 1.6 C a, b Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 1.6 A a, b, c T = 70 C - 1.6 A A c Pulsed Drain Current (10 s Pulse Width) I - 6.5 DM c T = 25 C - 1.6 C a, b Continuous Source-Drain Diode Current I S a, b T = 25 C - 1.3 A T = 25 C 2.78 C T = 70 C 1.78 C a, b Maximum Power Dissipation P W D a, b T = 25 C 2.5 A a, b T = 70 C 1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, d Maximum Junction-to-Ambient t 5 s R 60 80 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. c. Package limited. d. Maximum under steady state conditions is 125 C/W. Document Number: 73338 www.vishay.com S10-0792-Rev. F, 05-Apr-10 1 YYSi1499DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 8 V DS GS D V Temperature Coefficient V /T - 9 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T - 2.2 GS(th) GS(th) J V = V , I = - 250 A - 0.35 - 0.8 DS GS D Gate-Source Threshold Voltage V V GS(th) V = V , I = 5 mA - 0.55 DS GS D V = 0 V, V = 5 V 100 nA Gate-Source Leakage I GSS DS GS V = - 8 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V 5 V, V = - 4.5 V - 6.5 A D(on) DS GS V = - 4.5 V, I = - 2.0 A 0.0622 0.078 GS D V = - 2.5 V, I = - 1.9 A 0.078 0.095 GS D a Drain-Source On-State Resistance R V = - 1.8 V, I = - 0.8 A 0.094 0.115 DS(on) GS D V = - 1.5 V, I = - 0.5 A 0.118 0.153 GS D V = - 1.2 V, I = - 0.100 A 0.424 GS D a Forward Transconductance g V = - 4 V, I = - 2.0 A 8 S fs DS D b Dynamic Input Capacitance C 650 iss Output Capacitance C V = - 4 V, V = 0 V, f = 1 MHz 220 pF oss DS GS Reverse Transfer Capacitance C 122 rss Total Gate Charge Q 10.5 16 g Gate-Source Charge Q 1.3V = - 4 V, V = - 4.5 V, I = - 1.6 A nC gs DS GS D Gate-Drain Charge Q 1.9 gd Gate Resistance R f = 1 MHz 9.5 g Turn-On Delay Time t 914 d(on) Rise Time t 40 60 r V = - 4 V, R = 2 DD L I - 2 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 50D GEN g 75 d(off) Fall Time t 60 90 f ns Turn-On Delay Time t 815 d(on) Rise Time t 40 60 r V = - 4 V, R = 2 DD L I - 2 A, V = - 8 V, R = 1 Turn-Off Delay Time t 46D GEN g 70 d(off) Fall Time t 60 90 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 1.6 S C A Pulse Diode Forward Current I - 6.5 SM Body Diode Voltage V I = - 2.4 A, V = 0 V - 0.7 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 25 38 ns rr Body Diode Reverse Recovery Charge Q 711 nC rr I = - 2.0 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 9 a ns Reverse Recovery Rise Time t 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73338 2 S10-0792-Rev. F, 05-Apr-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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