3 m3 mmm SiZ342DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY PowerPAIR optimizes high-side and low-side V (V) R () MAX. I (A) Q (Typ.) DS DS(on) D g MOSFETs for synchronous buck converters a Channel-1 0.0115 at V = 10 V 30 GS TrenchFET Gen IV power MOSFETs and 30 4.5 nC 0.0153 at V = 4.5 V 27.5 GS Channel-2 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PowerPAIR 3 x 3 G 2 S 2 8 S APPLICATIONS 2 7 D 1 S 2 6 Synchronous buck 5 S /D 1 2 (Pin 9) - Battery charging D 1 - Computer system power G 1 1 - Graphic cards 2 G 1 POL N-Channel 1 3 D 1 11 S /D 1 2 4 MOSFET D 1 D 1 Top View Bottom View G 2 Ordering Information: SiZ342DT-T1-GE3 (lead (Pb)-free and halogen-free) N-Channel 2 MOSFET S 2 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A CHANNEL-1 AND CHANNEL-2 PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage V +20 / -16 GS a T = 25 C 30 C T = 70 C 26.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 15.6 A b, c T = 70 C 12.4 A A Pulsed Drain Current (t = 100 s) I 100 DM T = 25 C 13.9 C Continuous Source Drain Diode Current I S b, c T = 25 C 3.1 A Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5mJ AS T = 25 C 16.7 C T = 70 C 10.7 C Maximum Power Dissipation P W D b, c T = 25 C 3.7 A b, c T = 70 C 2.4 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-0031-Rev. B, 19-Jan-15 Document Number: 62949 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3 mm3 mmSiZ342DT www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS CHANNEL-1 AND CHANNEL-2 PARAMETER SYMBOL TYP. MAX. UNIT a, b Maximum Junction-to-Ambient t 10 s R 27 34 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 67.5 thJC Notes a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 69 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J CHANNEL-1 AND CHANNEL-2 PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 - - V DS GS D V Temperature Coefficient V /T I = 250 A - 20 - DS DS J D mV/C V Temperature Coefficient V )/T I = 250 A - -5.6 - GS(th) GS(th J D Gate Threshold Voltage V V = V , I = 250 A 1.2 - 2.4 V GS(th) DS GS D Gate Source Leakage I V =0 V, V = +20 V/ -16 V - - 100 nA GSS DS GS V = 30 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C - - 5 DS GS J b On-State Drain Current I V 5 V,V = 10 V 10 - - A D(on) DS GS V = 10 V, I = 14.4 A - 0.0084 0.0115 GS D b Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 13 A - 0.0111 0.0153 GS D b Forward Transconductance g V = 15 V, I = 14.4 A - 37 - S fs DS D a Dynamic Input Capacitance C - 650 - iss V = 15 V, V = 0 V, f = 1 MHz Output Capacitance C - 236 - pF oss DS GS Reverse Transfer Capacitance C -20- rss C / C Ratio 0.03 - 0.06 - rss iss V = 15 V, V = 10 V, I = 14.4 A - 10 20 DS GS D Total Gate Charge Q g -4.5 9 Gate-Source Charge Q -2.1 - nC gs V = 15 V,V = 4.5 V, I = 14.4 A DS GS D Gate-Drain Charge Q -0.7- gd Output Charge Q -6.6 - oss Gate Resistance R f = 1 MHz 0.3 1.4 2.8 g Turn-On Delay Time t -15 23 d(on) Rise Time t -50 75 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t -1D GEN g 624 d(off) Fall Time t -10 20 f ns Turn-On Delay Time t -8 16 d(on) Rise Time t -15 23 r V = 15 V, R = 1.5 DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t -1D GEN g 726 d(off) Fall Time t -7 14 f S15-0031-Rev. B, 19-Jan-15 Document Number: 62949 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000