Si1563DH Vishay Siliconix Complementary 20 V (D-S) Low-Threshold MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.280 at V = 4.5 V 1.28 GS TrenchFET Power MOSFETs: 1.8 V Rated N-Channel 20 0.360 at V = 2.5 V 1.13 GS Thermally Enhanced SC-70 Package 0.450 at V = 1.8 V 1.00 GS Fast Switching 0.490 at V = - 4.5 V - 1.00 Compliant to RoHS Directive 2002/95/EC GS P-Channel - 20 0.750 at V = - 2.5 V - 0.81 GS APPLICATIONS 1.10 at V = - 1.8 V - 0.67 GS Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) D S 1 2 S 1 6 D Marking Code 1 1 EB XX 5 G 2 G 1 2 Lot Traceability and Date Code G 2 Part Code G 1 D 3 4 S 2 2 Top View S D 1 2 Ordering Information: Si1563DH-T1-E3 (Lead (Pb)-free) Si1563DH-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel P-Channel ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Unit Drain-Source Voltage V 20 - 20 DS V Gate-Source Voltage V 8 8 GS T = 25 C 1.28 1.13 - 1.00 - 0.88 A a Continuous Drain Current (T = 150 C) I J D T = 85 C 0.92 0.81 - 0.72 - 0.63 A A Pulsed Drain Current I 4.0 - 3.0 DM a Continuous Source Current (Diode Conduction) I 0.61 0.48 - 0.61 - 0.48 S T = 25 C 0.74 0.57 0.30 0.57 A a Maximum Power Dissipation P W D T = 85 C 0.38 0.30 0.16 0.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 130 170 a Maximum Junction-to-Ambient R thJA Steady State 170 220 C/W Maximum Junction-to-Foot (Drain) Steady State R 80 100 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 71963 www.vishay.com S10-1054-Rev. B, 03-May-10 1 YYSi1563DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V , I = 100 A N-Ch 0.45 1 DS GS D Gate Threshold Voltage V V GS(th) V = V , I = - 100 A P-Ch - 0.45 1 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 8 V nA GSS DS GS P-Ch 100 V = 16 V, V = 0 V N-Ch 1 DS GS V = - 16 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 16 V, V = 0 V, T = 85 C N-Ch 5 DS GS J V = - 16 V, V = 0 V, T = 85 C P-Ch - 5 DS GS J V 5 V, V = 4.5 V N-Ch 2 DS GS a On-State Drain Current I A D(on) V - 5 V, V = - 4.5 V P-Ch - 2 DS GS V = 4.5 V, I = 1.13 A N-Ch 0.220 0.280 GS D V = - 4.5 V, I = - 0.88 A P-Ch 0.400 0.490 GS D V = 2.5 V, I = 0.99 A N-Ch 0.281 0.360 GS D a Drain-Source On-State Resistance R DS(on) V = - 2.5 V, I = - 0.71 A P-Ch 0.610 0.750 GS D V = 1.8 V, I = 0.20 A N-Ch 0.344 0.450 GS D V = - 1.8 V, I = - 0.20 A P-Ch 0.850 1.10 GS D V = 10 V, I = 1.13 A N-Ch 2.6 DS D a Forward Transconductance g S fs V = - 10 V, I = - 0.88 A P-Ch 1.5 DS D I = 0.48 A, V = 0 V N-Ch 0.8 1.2 S GS a Diode Forward Voltage V V SD I = - 0.48 A, V = 0 V P-Ch - 0.8 - 1.2 S GS b Dynamic N-Ch 1.25 2 Total Gate Charge Q g N-Channel P-Ch 1.2 1.8 V = 10 V, V = 4.5 V, I = 1.13 A DS GS D N-Ch 0.21 Gate-Source Charge Q nC gs P-Channel P-Ch 0.3 V = - 10 V, V = - 4.5 V, I = - 0.88 DS GS D N-Ch 0.3 A Gate-Drain Charge Q gd P-Ch 0.21 N-Ch 15 25 Turn-On Delay Time t d(on) P-Ch 18 30 N-Channel V = 10 V, R = 20 N-Ch 22 35 DD L Rise Time t r I 0.5 A, V = 4.5 V, R = 6 D GEN g P-Ch 25 40 N-Ch 25 40 P-Channel Turn-Off Delay Time t ns d(off) V = - 10 V, R = 20 P-Ch 15 25 DD L I - 0.5 A, V = - 4.5 V, R = 6 D GEN g N-Ch 12 20 Fall Time t f P-Ch 12 20 N-Ch 30 60 I = 0.48 A, dI/dt = 100 A/s Reverse Recovery Time t rr F P-Ch 30 60 Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71963 2 S10-1054-Rev. B, 03-May-10