X-On Electronics has gained recognition as a prominent supplier of SI1869DH-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1869DH-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1869DH-T1-E3 Vishay

SI1869DH-T1-E3 electronic component of Vishay
SI1869DH-T1-E3 Vishay
SI1869DH-T1-E3 MOSFETs
SI1869DH-T1-E3  Semiconductors

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See Product Specifications
Part No. SI1869DH-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET LOAD SWITCH 1.8V RA W/ LEVEL SHIFT
Datasheet: SI1869DH-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.602 ea
Line Total: USD 0.6 
Availability - 2714
Ship by Thu. 02 Jan to Mon. 06 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1543
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 75
Multiples : 1
75 : USD 0.866
111 : USD 0.5879
111 : USD 0.585
166 : USD 0.3908
250 : USD 0.3869
500 : USD 0.2999
1000 : USD 0.2344

11640
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.273
6000 : USD 0.2665
9000 : USD 0.2665
12000 : USD 0.2665
15000 : USD 0.26

2714
Ship by Thu. 02 Jan to Mon. 06 Jan
MOQ : 1
Multiples : 1
1 : USD 0.602
10 : USD 0.5082
91 : USD 0.189
249 : USD 0.1792
30000 : USD 0.1722

1543
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 111
Multiples : 1
111 : USD 0.585
166 : USD 0.3908
250 : USD 0.3869
500 : USD 0.2999
1000 : USD 0.2344

5806
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 3000
Multiples : 1
3000 : USD 0.2435
6000 : USD 0.2236
9000 : USD 0.1949
24000 : USD 0.1884

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI1869DH-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1869DH-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si1869DH www.vishay.com Vishay Siliconix Load Switch with Level-Shift FEATURES SOT-363 SC-70 (6 leads) TrenchFET power MOSFETs: 1.8 V rated S 2 ESD protected: 2000 V on input switch, V 4 ON/OFF ON/OFF 165 m low R 5 DS(on) R1, C1 6 1.8 to 20 V input 1.5 to 8 V logic level control Available Low profile, small footprint SC-70-6 package 3 D 2 Adjustable slew-rate 2 D 2 Material categorization: for definitions of compliance 1 please see www.vishay.com/doc 99912 R2 Top View Marking code: VC APPLICATIONS Si1869DH 4 2, 3 D2 Level shift for S2 PRODUCT SUMMARY Q2 portable devices V (V) -20 D2S2 6 R max. ( ) at V = 4.5 V 0.165 R1, DS(on) GS C1 R max. ( ) at V = 2.5 V 0.222 DS(on) GS 5 R max. ( ) at V = 1.8 V 0.303 DS(on) GS ON/OFF Q1 Configuration Single 1 R2 ORDERING INFORMATION Package SOT-363 Lead (Pb)-free Si1869DH-T1-E3 Lead (Pb)-free and halogen-free Si1869DH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-source voltage (D2-S2) V -20 DS Input voltage V 20 V IN ON/OFF voltage V 8 ON/OFF a, b Continuous 1.2 Load current I L b, c Pulsed 3 A a Continuous intrinsic diode conduction I -0.4 S a Maximum power dissipation P 1W D Operating junction and storage temperature range T , T -55 to +150 C J stg ESD rating, MIL-STD-883D human body model (100 pF, 1500 )ESD 2 kV THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a Maximum junction-to-ambient (continuous current) R 100 125 thJA C/W Maximum junction-to-foot (Q2) R 44 55 thJF Notes a. Surface mounted on FR4 board b. V = 20 V, V = 8 V, T = 25 C IN ON/OFF A c. Pulse test: pulse width 300 s, duty cycle 2 % S18-0276-Rev. D, 12-Mar-18 Document Number: 73449 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si1869DH www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT OFF Characteristics Reverse leakage current I V = 8 V, V = 0 V - - 1 A FL IN ON/OFF Diode forward voltage V I = -0.4 A 0.4 0.6 1.1 V SD S ON Characteristics a Input voltage range V 1.8 - 20 IN V Drain to source breakdown voltage V V = 0 V, I = -250 A -20 - - DS GS D (p-channel) V = 1.5 V, V = 4.5 V, I = 1.2 A - 0.132 0.165 ON/OFF IN D On-resistance (p-channel) at 1 A R V = 1.5 V, V = 2.5 V, I = 1 A - 0.177 0.222 DS(on) ON/OFF IN D V = 1.5 V, V = 1.8 V, I = 0.7 A - 0.242 0.303 ON/OFF IN D V 0.2 V, V = 5 V, V = 1.5 V 1 - - IN-OUT IN ON/OFF On-state (p-channel) drain-current I A D(on) V 0.3 V, V = 3 V, V = 1.5 V 1 - - IN-OUT IN ON/OFF Note a. V = < 12 V, V = 8 V, T = 25 C recommended application specifications IN ON/OFF A Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. APPLICATION CIRCUITS 40 Si1869DH t f 35 2, 3 4 I = 1 A L V OUT 30 V IN V = 3 V ON/OFF Q2 C = 10 F i R1 C1 25 C = 1 F o 6 6 20 t 15 d(off) 5 ON/OFF 10 LOAD C o Q1 5 t r t d(on) C 0 i 1 02 4 6 8 10 R2 (k) R2 Note: For R2 switching variations with other V /R1 IN GND R2 combinations see Typical Characteristics Switching Variation R2 at V = 2.5 V, R1 = 20 k IN The Si1869DH is ideally suited for high-side load switching COMPONENTS in portable applications. The integrated n-channel level-shift a R1 Pull-Up Resistor Typical 10 k to 1 M device saves space by reducing external components. The a R2 Optional Slew-Rate Control Typical 0 to 100 k slew rate is set externally so that rise-times can be tailored C1 Optional Slew-Rate Control Typical 1000 pF to different load types. Note a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on S18-0276-Rev. D, 12-Mar-18 Document Number: 73449 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Time (s)

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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