Product Information

SI1902DL-T1-E3

SI1902DL-T1-E3 electronic component of Vishay

Datasheet
MOSFET 20V 0.70A
Silicon NPN Phototransistor with wide operating temperature range and high radiant sensitivity.
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

39: USD 0.2984 ea
Line Total: USD 11.64

2716 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 39  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
18 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6102
10 : USD 0.4917
30 : USD 0.4385
100 : USD 0.3753
500 : USD 0.3476
1000 : USD 0.3298

2716 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 39
Multiples : 1
39 : USD 0.2984
100 : USD 0.2071
250 : USD 0.2029

2910 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2086
9000 : USD 0.2044

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Additional Infomation About Product

The SI1902DL-T1-E3 is a thin-film, through-hole, single-pole, double-throw (SPDT) switch manufactured by Vishay. It is designed to be part of a radio-frequency (RF) system and has a maximum operating frequency of 5GHz. The switch is rated at 5V and can handle up to 500mA. It has an isolation voltage of 50V and a typical insertion loss of 0.4dB max. It has an operating temperature range of -30°C to 105°C and is housed in a SMD package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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