Si1539CDL Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.388 at V = 10 V 0.7 GS TrenchFET Power MOSFET N-Channel 30 0.55 0.525 at V = 4.5 V 0.6 100 % R Tested GS g 0.890 at V = - 10 V - 0.5 GS P-Channel - 30 0.8 APPLICATIONS 1.7 at V = - 4.5 V - 0.3 GS DC/DC Converter Load Switch SOT-363 SC-70 (6-LEADS) D S 1 2 S 1 6 D 1 1 Marking Code G 2 5 RG XX G 2 G 1 2 G 1 Lot Traceability and Date Code D 3 4 S 2 2 Part Code S D Top View 1 2 Ordering Information: Si1539CDL-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 30 - 30 DS V Gate-Source Voltage V 20 GS T = 25 C 0.7 - 0.5 C T = 70 C 0.6 - 0.4 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 0.7 - 0.4 b, c b, c T = 70 C A A 0.5 - 0.4 T = 25 C 0.3 - 0.3 C I Source-Drain Current Diode Current S b, c b, c T = 25 C A 0.2 - 0.2 I Pulsed Drain Current 2- 1 DM T = 25 C 0.34 0.34 C T = 70 C 0.22 0.22 C P Maximum Power Dissipation W D b, c b, c T = 25 C 0.29 0.29 A b, c b, c T = 70 C 0.18 0.18 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit b, d R t 10 s 365 438 365 438 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 308 370 308 370 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 486 C/W (N-Channel) and 486 C/W (P-Channel). Document Number: 67469 www.vishay.com S11-0238-Rev. A, 14-Feb-11 1 YYSi1539CDL Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V = 0 V, I = 250 A N-Ch 30 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 30 GS D I = 250 A N-Ch 30 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 18 D mV/C I = 250 A N-Ch - 3.6 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 3.3 D V = V , I = 250 A N-Ch 1.2 2.5 DS GS D V Gate-Source Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 1.2 - 2.5 DS GS D N-Ch 100 I V = 0 V, V = 20 V Gate-Body Leakage nA GSS DS GS P-Ch 100 V = 30 V, V = 0 V N-Ch 1 DS GS V = - 30 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 30 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V =5 V, V = 10 V N-Ch 2 DS GS b I A On-State Drain Current D(on) V = -5 V, V = - 10 V P-Ch - 1 DS GS V = 10 V, I = 0.6 A N-Ch 0.323 0.388 GS D V = - 10 V, I = - 0.4 A P-Ch 0.740 0.890 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 0.1A N-Ch 0.437 0.525 GS D V = - 4.5 V, I = - 0.1 A P-Ch 1.4 1.7 GS D V = 15 V, I = 0.6 A N-Ch 1.2 DS D b g S Forward Transconductance fs V = - 15 V, I = - 0.4 A P-Ch 0.6 DS D a Dynamic N-Ch 28 C Input Capacitance iss N-Channel P-Ch 34 V = 15 V, V = 0 V, f = 1 MHz DS GS N-Ch 10 C Output Capacitance pF oss P-Ch 12 P-Channel N-Ch 5 V = - 15 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 7 V = 15 V, V = 10 V, I = 0.6 A N-Ch 1 1.5 DS GS D V = - 15 V, V = - 10 V, I = - 0.4 A P-Ch 1.5 3 DS GS D Total Gate Charge Q g N-Ch 0.55 1.1 N-Channel P-Ch 0.8 1.2 nC V = 15 V, V = 4.5 V I = 0.6 A DS GS D N-Ch 0.2 Q Gate-Source Charge gs P-Ch 0.4 P-Channel N-Ch 0.2 V = - 15 V, V = - 4.5 V, I = - 0.4 A DS GS D Q Gate-Drain Charge gd P-Ch 0.35 N-Ch 0.7 3.7 7.4 R Gate Resistance f = 1 MHz g P-Ch 1.7 8.3 16.6 www.vishay.com Document Number: 67469 2 S11-0238-Rev. A, 14-Feb-11