New Product Si1441EDH Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.041 at V = - 4.5 V - 4 GS TrenchFET Power MOSFET - 20 0.054 at V = - 2.5 V - 4 12.5 nC Typical ESD Performance 1500 V GS 100 % R Tested 0.100 at V = - 1.8 V - 4 GS g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices SOT-363 - Cellular Phone SC-70 (6-LEADS) S - DSC - Portable Game Console D 1 6 D - MP3 - GPS 5 D 2 D Marking Code G R G 3 4 S B Q X Part code X X X Top View Lot Traceability and Date code D P-Channel MOSFET Ordering Information: Si1441EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 10 GS a T = 25 C - 4 C T = 70 C - 4 C Continuous Drain Current (T = 150 C) I J D a, b, c = 25 C T - 4 A a, b, c T = 70 C A - 4 A Pulsed Drain Current (t = 300 s) I - 25 DM T = 25 C - 2.3 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.3 A T = 25 C 2.8 C T = 70 C 1.8 C Maximum Power Dissipation P W D b, c T = 25 C 1.6 A b, c T = 70 C 1.0 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 60 80 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 C/W. Document Number: 66823 www.vishay.com S10-1827-Rev. A, 09-Aug-10 1New Product Si1441EDH Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 11 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.4 - 1 V GS(th) DS GS D V = 0 V, V = 10 V 8 DS GS Gate-Source Leakage I GSS = 0 V, V = 4.5 V 1 V DS GS A V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 15 A D(on) DS GS V = - 4.5 V, I = - 5 A 0.034 0.041 GS D a Drain-Source On-State Resistance R V = - 2.5 V, I = - 4.4 A 0.045 0.054 DS(on) GS D V = - 1.8 V, I = - 1 A 0.067 0.100 GS D a Forward Transconductance g V = - 10 V, I = - 5 A 16 S fs DS D b Dynamic Total Gate Charge V = - 10 V, V = - 8 V, I = - 5 A 22 33 DS GS D Q g 12.5 19 Gate-Source Charge nC Q V = - 10 V, V = - 4.5 V, I = - 5 A 1.8 gs DS GS D Gate-Drain Charge Q 3.3 gd Gate Resistance R f = 1 MHz 0.08 0.43 0.86 k g Turn-On Delay Time t 150 225 d(on) Rise Time t 300 450 V = - 10 V, R = 1.4 r DD L I - 4 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 1620D GEN g 2430 d(off) Fall Time t 560 840 f ns Turn-On Delay Time t 50 100 d(on) Rise Time t 90 180 r V = - 10 V, R = 1.4 DD L I - 4 A, V = - 10 V, R = 1 Turn-Off Delay Time t 2500D GEN g 3750 d(off) Fall Time t 600 900 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 2.3 S C A Pulse Diode Forward Current I - 25 SM Body Diode Voltage V I = - 4 A, V = 0 V - 0.85 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 18 36 ns rr Body Diode Reverse Recovery Charge Q 816 nC rr I = - 4 A, dI/dt = 100 A/s, T = 25 C F J 18 Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66823 2 S10-1827-Rev. A, 09-Aug-10