Si1450DH Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.047 at V = 4.5 V 4.0 GS TrenchFET Power MOSFET: 1.5 V Rated a 0.051 at V = 2.5 V 4.0 GS 100 % R Tested g 8 4.24 nC a 0.058 at V = 1.8 V 4.0 Compliant to RoHS Directive 2002/95/EC GS a 0.069 at V = 1.5 V 4.0 GS APPLICATIONS Load Switch for Portable Applications S OT-363 - Guaranteed Operation at V = 1.5 V GS SC-70 (6-LEADS) - Critical for Optimized Design and Space Savings D D 1 6 D Marking Code 5 D 2 D AH XX Lot Tra ce ab ility a nd D a te Code G G 3 4 S P a rt Code Top View S Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free) Si1450DH-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 8 DS V Gate-Source Voltage V 5 GS a T = 25 C 6.04 C a T = 70 C 4.8 C Continuous Drain Current (T = 150 C) I J D a T = 25 C 4.53 A a T = 70 C 3.62 A A Pulsed Drain Current I 15 DM T = 25 C 2.3 C Continuous Source-Drain Diode Current I S c T = 25 C 1.3 A T = 25 C 2.78 C T = 70 C 1.78 C Maximum Power Dissipation P W D b, c T = 25 C 1.56 A b, c T = 70 C 1.0 A T , T - 55 to 150 Operating Junction and Storage Temperature Range J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 60 80 Maximum Junction-to-Ambient thJA C/W R 34 45 Maximum Junction-to-Foot (Drain) Steady State thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 C/W. Document Number: 74275 www.vishay.com S10-0646-Rev. B, 22-Mar-10 1 Y Y Si1450DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 8 V DS GS D V Temperature Coefficient V /T 8.32 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.7 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.3 1 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 5 V 100 ns GSS DS GS V = 8 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 8 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 15 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 4.0 A 0.039 0.047 GS D V = 2.5 V, I = 4.0 A 0.042 0.051 GS D a Drain-Source On-State Resistance R DS(on) V = 1.8 V, I = 4.0 A 0.048 0.058 GS D V = 1.5 V, I = 1.28 A 0.053 0.069 GS D a Forward Transconductance g V = 4 V, I = 4.0 A 15.5 S fs DS D b Dynamic Input Capacitance C 535 iss Output Capacitance C V = 4 V, V = 0 V, f = 1 MHz 120 pF oss DS GS Reverse Transfer Capacitance C 61 rss V = 4 V, V = 5 V, I = 4.0 A 4.7 7.05 DS GS D Total Gate Charge Q g 4.24 6.4 nC Gate-Source Charge Q V = 4 V, V = 4.5 V, I = 4.0 A 1.2 gs DS GS D Gate-Drain Charge Q 0.810 gd Gate Resistance R f = 1 MHz 7.3 11 g Turn-On Delay Time t 812 d(on) Rise Time t 73 110 r V = 4 V, R = 1.11 DD L ns I 3.6 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 18D GEN g 27 d(off) Fall Time t 57.5 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 2.6 S C A Pulse Diode Forward Current I 15 SM Body Diode Voltage V I = 2.6 A, V = 0 V 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 14.3 21.45 ns rr Body Diode Reverse Recovery Charge Q 3.6 5.4 nC rr I = 2.6 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 6.8 a ns Reverse Recovery Rise Time t 7.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74275 2 S10-0646-Rev. B, 22-Mar-10