Si1480DH Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % R and UIS Tested V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g g a Material categorization: 0.200 at V = 10 V 2.6 GS For definitions of compliance please see 100 1.8 0.320 at V = 4.5 V 2.2 GS www.vishay.com/doc 99912 APPLICATIONS Load Switches DC/DC Converters Power Management LED Backlighting SOT-363 SC-70 (6-LEADS) D D 1 6 D Marking Code AU XX 5 D 2 D G Lot Traceability and Date Code G 3 4 S Part Code S Top View N-Channel MOSFET Ordering Information: Si1480DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS a T = 25 C 2.6 C T = 70 C 2.2 C a Continuous Drain Current (T = 150 C) I J D b,c T = 25 C 2.1 A A b,c T = 70 C 1.7 A Pulsed Drain Current (t = 300 s) I 7 DM Avalanche Current I 2.4 AS L = 0.1 mH Repetitive Avalanche Energy E 0.29 mJ AS T = 25 C 2.3 C Continuous Source-Drain Diode Current I A S b,c T = 25 C 1.3 A T = 25 C 2.8 C T = 70 C 1.8 C a Maximum Power Dissipation P W D b,c T = 25 C 1.5 A b,c T = 70 C 1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b,d R t 5 s 60 80 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 34 45 thJF Notes: a. Package Limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 C/W. Document Number: 67327 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-2727-Rev. A, 12-Nov-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi1480DH Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 V DS GS D V Temperature Coefficient V /T 54 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.1 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.6 3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V = 5 V, V = 10 V 6 A D(on) DS GS V = 10 V, I = 1.9 A 0.161 0.200 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 1.5 A 0.230 0.320 GS D Forward Transconductance g V = 10 V, I = 1.9 A 3.7 S fs DS D b Dynamic Input Capacitance C 130 iss Output Capacitance C 54V = 50 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 10 rss V = 50 V, V = 10 V, I = 2.7 A 3.3 5 DS GS D Total Gate Charge Q g 1.8 2.7 nC Gate-Source Charge Q V = 50 V, V = 4.5 V, I = 2.7 A 0.7 gs DS GS D Gate-Drain Charge Q 1 gd Gate Resistance R f = 1 MHz 1.3 6.5 13 g Turn-On Delay Time t 15 30 d(on) Rise Time t 45 90 r V = 50 V, R = 23 DD L ns I 2.2 A, V = 4.5 V, R = 1 Turn-Off DelayTime t 1120 D GEN g d(off) Fall Time t 13 25 f Turn-On Delay Time t 510 d(on) Rise Time t 11 20 r V = 50 V, R = 23 DD L ns I 2.2 A, V = 10 V, R = 1 Turn-Off DelayTime t 1020 D GEN g d(off) Fall Time t 10 20 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C 2.3 S C A a Pulse Diode Forward Current I 7 SM Body Diode Voltage V I = 2.2 A, V = 0 V 0.9 1.2 V SD S GS Body Diode Reverse Recovery Charge Q 20 40 nC rr Body Diode Reverse Recovery Time t 25 50 rr I = 2.2 A, dI/dt = 100 A/s, F T = 25 C Reverse Recovery Fall Time t 18 ns J a Reverse Recovery Rise Time t 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 67327 2 S12-2727-Rev. A, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000