Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) DS DS(on) D Material categorization: 0.385 at V = 4.5 V For definitions of compliance please see 0.70 GS N-Channel 20 www.vishay.com/doc 99912 0.630 at V = 2.5 V 0.54 GS 0.600 at V = - 4.5 V - 0.60 GS 0.850 at V = - 2.5 V P-Channel - 8 - 0.50 GS 1.200 at V = - 1.8 V - 0.42 GS SOT-363 SC-70 (6-LEADS) S 1 6 D 1 1 Marking Code 5 G 2 G 1 2 RB XX Lot Traceability and Date Code D 3 4 S 2 2 Part Code Top View Ordering Information: Si1555DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A N-Channel P-Channel Parameter Symbol Unit 5 s Steady State 5 s Steady State V Drain-Source Voltage 20 - 8 DS V V 8 Gate-Source Voltage 12 GS T = 25 C 0.70 0.66 - 0.60 - 0.57 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 0.50 0.48 - 0.43 - 0.41 A A I Pulsed Drain Current 1 DM a I 0.25 0.23 - 0.25 - 0.23 Continuous Source Current (Diode Conduction) S T = 25 C 0.30 0.27 0.30 0.27 A a P W Maximum Power Dissipation D T = 85 C 0.16 0.14 0.16 0.14 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 360 415 a R Maximum Junction-to-Ambient thJA Steady State 400 460 C/W R Maximum Junction-to-Foot (Drain) Steady State 300 350 thJF Note: a. Surface mounted on 1 x 1 FR4 board. Document Number: 71079 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0631-Rev. F, 25-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi1555DL Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V , I = 250 A N-Ch 0.6 1.4 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.45 - 1 DS GS D V = 0 V, V = 12 V N-Ch 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 8 V P-Ch 100 DS GS V = 20 V, V = 0 V N-Ch 1 DS GS V = - 8 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 85 C N-Ch 5 DS GS J V = - 8 V, V = 0 V, T = 85 C P-Ch - 5 DS GS J V 5 V, V = 4.5 V N-Ch 1 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V P-Ch - 1 DS GS V = 4.5 V, I = 0.66 A N-Ch 0.320 0.385 GS D V = - 4.5 V, I = - 0.57 A P-Ch 0.510 0.600 GS D a R V = 2.5 V, I = 0.40 A N-Ch 0.560 0.630 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 0.48 A P-Ch 0.720 0.850 GS D V = - 1.8 V, I = - 0.20 A P-Ch 1.000 1.200 GS D V = 10 V, I = 0.66 A N-Ch 1.5 DS D a g S Forward Transconductance fs V = - 4 V, I = - 0.57 A P-Ch 1.2 DS D I = 0.23 A, V = 0 V N-Ch 0.8 1.2 S GS a V V Diode Forward Voltage SD I = - 0.23 A, V = 0 V P-Ch - 0.8 - 1.2 S GS b Dynamic N-Ch 0.8 1.2 Total Gate Charge Q g N-Channel P-Ch 1.5 2.3 V = 10 V, V = 4.5 V, I = 0.66 A DS GS D N-Ch 0.06 Gate-Source Charge Q nC gs P-Ch 0.17 P-Channel N-Ch 0.30 V = - 4 V, V = - 4.5 V, I = - 0.57 A DS GS D Gate-Drain Charge Q gd P-Ch 0.16 N-Ch 10 20 Turn-On Delay Time t d(on) N-Channel P-Ch 6 12 V = 10 V, R = 20 DD L N-Ch 16 30 Rise Time t I 0.5 A, V = 4.5 V, R = 6 r D GEN g P-Ch 25 50 N-Ch 10 20 P-Channel Turn-Off Delay Time t d(off) ns P-Ch 10 20 V = - 4 V, R = 8 DD L N-Ch 10 20 I - 0.5 A, V = - 4.5 V, R = 6 D GEN g Fall Time t f P-Ch 10 20 I = 0.23 A, dI/dt = 100 A/s N-Ch 20 40 F t Source-Drain Reverse Recovery Time rr I = - 0.23 A, dI/dt = 100 A/s P-Ch 20 40 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 71079 2 S13-0631-Rev. F, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000