X-On Electronics has gained recognition as a prominent supplier of SI2307CDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2307CDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2307CDS-T1-E3 Vishay

SI2307CDS-T1-E3 electronic component of Vishay
SI2307CDS-T1-E3 Vishay
SI2307CDS-T1-E3 MOSFETs
SI2307CDS-T1-E3  Semiconductors

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See Product Specifications
Part No. SI2307CDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 30 V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2307CDS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2826 ea
Line Total: USD 1.41 
Availability - 3855
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
3855
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ : 5
Multiples : 5
5 : USD 0.2826
50 : USD 0.245
150 : USD 0.1962
500 : USD 0.161
3000 : USD 0.1541
6000 : USD 0.1501

457718
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 0.6762
10 : USD 0.4712
100 : USD 0.3128
500 : USD 0.253
1000 : USD 0.2189
3000 : USD 0.1859
9000 : USD 0.1859

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2307CDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2307CDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
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Image Part-Description
Stock Image SI2307CDS-T1-GE3
P-Channel 30 V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
Stock : 5200
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image SI2312BDS-T1-E3
N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image SI2312BDS-T1-GE3
N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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The Vishay SI2307CDS-T1-E3 is a P-Channel 30 V MOSFET (Metal Oxide Field Effect Transistor), designed for use in medium- and low-voltage circuits up to 30 V. It has a maximum continuous drain current of 3.5A (Tc) at a drain to source voltage of 30 V, with a specified maximum power dissipation of 1.1W (Ta) and 1.8W (Tc). The device is provided in an ultra-small, surface mount SOT-23-3 (TO-236) package for space-constrained designs and features low on-state resistance and double-pulse avalanche energy guaranteed to ensure minimum power loss in switching environments. It is ideal for load switch, dc-to-dc converter, and other medium- and low-voltage applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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