X-On Electronics has gained recognition as a prominent supplier of SI2308CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2308CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2308CDS-T1-GE3 Vishay

Name: SI2308CDS-T1-GE3
Brand: Vishay
SKU: SI2308CDST1GE3_Vishay
Availability: InStock
Rating: 5 (11 reviews)

SI2308CDS-T1-GE3 electronic component of Vishay

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See Product Specifications

Part No.	SI2308CDS-T1-GE3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 60V Vds 20V Vgs SOT-23
Datasheet:	SI2308CDS-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.1356 ea
Line Total: USD 406.8

Availability - 2910
Ship by Fri. 03 Jan to Thu. 09 Jan

MOQ: 3000 Multiples: 3000
Pack Size: 3000

SI2308CDS-T1-GE3 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

5458

Ship by Fri. 03 Jan to Thu. 09 Jan

MOQ : 118
Multiples : 1

118 : USD 0.5491
187 : USD 0.3481
191 : USD 0.341
353 : USD 0.184
357 : USD 0.1821
500 : USD 0.1801
1000 : USD 0.1585
3000 : USD 0.1369

2910

Ship by Fri. 03 Jan to Thu. 09 Jan

MOQ : 3000
Multiples : 3000

3000 : USD 0.1356
9000 : USD 0.1163
24000 : USD 0.1119
45000 : USD 0.1032

581

Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ : 5
Multiples : 5

5 : USD 0.3395
50 : USD 0.2705
150 : USD 0.2408
500 : USD 0.204
3000 : USD 0.1875
6000 : USD 0.1776

Specifications

Manufacturer

Vishay Vishay

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

2.6 A 2.6 A

Vds - Drain-Source Breakdown Voltage

60 V 60 V

Rds On - Drain-Source Resistance

200 mOhms 200 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

3 V 3 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1.6 W 1.6 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

2 nC 2 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Series

Si2308cds Si2308cds

Brand

Vishay / Siliconix Vishay / Siliconix

Forward Transconductance - Min

3.2 S 3.2 S

Cnhts

8541290000 8541290000

Fall Time

16 ns 16 ns

Hts Code

8541100080 8541100080

Mxhts

85411001 85411001

Product Type

Mosfet Mosfet

Rise Time

25 ns 25 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

10 ns 10 ns

Typical Turn-On Delay Time

23 ns 23 ns

Notes:- Show Stocked Products With Similar Attributes.

SI2308CDS-T1-GE3 Alternative Parts

We are delighted to provide the SI2308CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2308CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2308CDS-T1-GE3 is a small-signal MOSFET device in a SOT-23 package manufactured by Vishay. It has a maximum Vds (drain-source voltage) of 60V and a maximum Vgs (gate-source voltage) of 20V. It features low on-resistance, low gate charge, and a larger Cree drift region than comparable devices. Its fast switching characteristics offer excellent switching speed and efficiency, making it suitable for high-frequency, switching, and amplifier applications in consumer, computing, and telecommunication systems.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
5458 Ship by Fri. 03 Jan to Thu. 09 Jan MOQ : 118 Multiples : 1	118 : USD 0.5491 187 : USD 0.3481 191 : USD 0.341 353 : USD 0.184 357 : USD 0.1821 500 : USD 0.1801 1000 : USD 0.1585 3000 : USD 0.1369

2910 Ship by Fri. 03 Jan to Thu. 09 Jan MOQ : 3000 Multiples : 3000	3000 : USD 0.1356 9000 : USD 0.1163 24000 : USD 0.1119 45000 : USD 0.1032

581 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 5 Multiples : 5	5 : USD 0.3395 50 : USD 0.2705 150 : USD 0.2408 500 : USD 0.204 3000 : USD 0.1875 6000 : USD 0.1776

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Hot	SI2312BDS-T1-GE3 N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) Stock : 4603 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Hot	SI2314EDS-T1-E3 N-Channel 20 V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) Stock : 50125 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Hot	SI2309CDS-T1-GE3 MOSFET -60V Vds 20V Vgs SOT-23 Stock : 9612 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Hot	SI2309CDS-T1-E3 Vishay Semiconductors MOSFET 60V 1.6A 1.7W 345mohm 10V Stock : 3000 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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