X-On Electronics has gained recognition as a prominent supplier of SI2308CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2308CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2308CDS-T1-GE3 Vishay

SI2308CDS-T1-GE3 electronic component of Vishay
SI2308CDS-T1-GE3 Vishay
SI2308CDS-T1-GE3 MOSFETs
SI2308CDS-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI2308CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V Vds 20V Vgs SOT-23
Datasheet: SI2308CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1249 ea
Line Total: USD 374.7 
Availability - 2910
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5312
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 137
Multiples : 1
137 : USD 0.4742
192 : USD 0.3382
196 : USD 0.3318
353 : USD 0.184
357 : USD 0.1821
500 : USD 0.1801
1000 : USD 0.1531
3000 : USD 0.1262

2910
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1249
9000 : USD 0.1039
24000 : USD 0.1005
45000 : USD 0.097

499
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.4914
50 : USD 0.3309
150 : USD 0.263
500 : USD 0.2195
3000 : USD 0.2001
6000 : USD 0.1883

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI2308CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2308CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2308CDS-T1-GE3 is a small-signal MOSFET device in a SOT-23 package manufactured by Vishay. It has a maximum Vds (drain-source voltage) of 60V and a maximum Vgs (gate-source voltage) of 20V. It features low on-resistance, low gate charge, and a larger Cree drift region than comparable devices. Its fast switching characteristics offer excellent switching speed and efficiency, making it suitable for high-frequency, switching, and amplifier applications in consumer, computing, and telecommunication systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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