X-On Electronics has gained recognition as a prominent supplier of SI2312BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2312BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2312BDS-T1-E3 Vishay

SI2312BDS-T1-E3 electronic component of Vishay
SI2312BDS-T1-E3 Vishay
SI2312BDS-T1-E3 MOSFETs
SI2312BDS-T1-E3  Semiconductors

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See Product Specifications
Part No. SI2312BDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2312BDS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2116 ea
Line Total: USD 634.8 
Availability - 2910
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
3346
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.6258
50 : USD 0.4293
150 : USD 0.3451
500 : USD 0.2647
3000 : USD 0.2416
6000 : USD 0.228

235152
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7812
10 : USD 0.5475
100 : USD 0.3335
500 : USD 0.2563
1000 : USD 0.2321
3000 : USD 0.2002

2910
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.2116
45000 : USD 0.1753

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2312BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2312BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Image Part-Description
Stock Image SI2312BDS-T1-GE3
N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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N-Channel 30 V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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The SI2312BDS-T1-E3 is an N-Channel, 20 V, 3.9 A (Ta) 750 mW (Ta) surface mount SOT-23-3 (TO-236) transistor manufactured by Vishay. It is a very small, three-lead, surface mount, field-effect transistor suitable for high speed switching and amplifier applications. It is able to handle 3.9 amps while still being able to withstand 20 volts of current. A 750 mW (Ta) power dissipation rating allows it to be used for various applications due to its high thermal capacity. Sized at 3x2.9x1.1 mm, this tiny transistor is designed to allow for compact designs. Its exceptional performance and reliability ensure it is suitable for a wide range of applications including switching and amplifying applications, as well as radio frequency and microwave communication applications. The SI2312BDS-T1-E3 is a versatile and cost-effective solution for many projects.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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