X-On Electronics has gained recognition as a prominent supplier of SI2312BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2312BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2312BDS-T1-E3 Vishay

SI2312BDS-T1-E3 electronic component of Vishay
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Part No.SI2312BDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2312BDS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2047 ea
Line Total: USD 614.1 
Availability - 2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
4038
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 5
Multiples : 5
5 : USD 0.4256
50 : USD 0.3486
150 : USD 0.3154
500 : USD 0.2466
3000 : USD 0.2281
6000 : USD 0.2171

239574
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5665
10 : USD 0.3993
100 : USD 0.3014
500 : USD 0.2563
1000 : USD 0.2321
3000 : USD 0.2002
45000 : USD 0.1958

2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2047
45000 : USD 0.1831

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
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Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2312BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2312BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
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Image Part-Description
Stock Image SI2312BDS-T1-GE3
N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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N-Channel 30 V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)
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The SI2312BDS-T1-E3 is an N-Channel, 20 V, 3.9 A (Ta) 750 mW (Ta) surface mount SOT-23-3 (TO-236) transistor manufactured by Vishay. It is a very small, three-lead, surface mount, field-effect transistor suitable for high speed switching and amplifier applications. It is able to handle 3.9 amps while still being able to withstand 20 volts of current. A 750 mW (Ta) power dissipation rating allows it to be used for various applications due to its high thermal capacity. Sized at 3x2.9x1.1 mm, this tiny transistor is designed to allow for compact designs. Its exceptional performance and reliability ensure it is suitable for a wide range of applications including switching and amplifying applications, as well as radio frequency and microwave communication applications. The SI2312BDS-T1-E3 is a versatile and cost-effective solution for many projects.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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