Si2316BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ) DS DS(on) I (A) g Definition D TrenchFET Power MOSFET 0.050 at V = 10 V 4.5 GS 3.16 nC 30 PWM Optimized 0.080 at V = 4.5 V 3.4 GS 100 % R tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Battery Switch DC/DC Converter TO-236 (SOT-23) G 1 3 D S 2 Top View Si2316DS (M6)* *Marking Code Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free) Si2316BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Unit Parameter Symbol Limit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 4.5 C T = 70 C 3.6 C Continuous Drain Current (T = 150 C) I J D b, c 3.9 T = 25 C A b, c T = 70 C 3.13 A A Pulsed Drain Current I 20 DM T = 25 C 1.39 C Continuous Source-Drain Diode Current I S b, c T = 25 C 1.04 A T = 25 C 1.66 C T = 70 C 1.06 C Maximum Power Dissipation P W D b, c T = 25 C 1.25 A b, c T = 70 C 0.8 A C Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient 5 s R 80 100 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 60 75 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 moard. c. t = 5 s. d. Maximum under Steady State conditions is 130 C/W. Document Number: 70445 www.vishay.com S09-1503-Rev. B, 10-Aug-09 1Si2316BDS Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS DS D V Temperature Coefficient V /T 23.92 DS DS J mV/C I = 250 A D V Temperature Coefficient V /T 5.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1 3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V = 10 V, I = 3.9 A 0.041 0.050 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 3.3 A 0.064 0.080 GS D a Forward Transconductance g V = 15V, I = 3.9 A 6 S fs DS D b Dynamic Input Capacitance C 350 iss Output Capacitance C 65 oss V = 15 V, V = 0 V, f = 1 MHz pF DS GS Reverse Transfer Capacitance C 37 rss V = 15 V, V = 10 V, I = 3.9 A 6.35 9.6 DS GS D Total Gate Charge Q g 3.16 4.8 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 3.9 A 1.56 gs DS GS D Gate-Drain Charge Q 1.1 gd Gate Resistance R f = 1 MHz 2.6 3.9 g Turn-On Delay Time t 4.5 6.75 d(on) Rise Time t 11 16.5 V = 15 V, R = 4.8 r DD L ns I 3.13 A, V = 10 V, R = 1 Turn-Off Delay Time t 12D GEN G 18 d(off) Fall Time t 710.5 f Turn-On Delay Time t 20 30 d(on) Rise Time t 65 98 V = 15 V, R = 6.25 r DD L ns I = 2.4 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 11D GEN g 17 d(off) Fall Time t 23 35 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 1.39 S C A a Pulse Diode Forward Current I 20 SM Body Diode Voltage V I = 2.0 A 0.8 1.2 V SD S Body Diode Reverse Recovery Time t 10 15 ns rr Body Diode Reverse Recovery Charge Q 46 nC rr I = 2.0 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 6.6 a ns Reverse Recovery Rise Time t 3.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70445 2 S09-1503-Rev. B, 10-Aug-09