X-On Electronics has gained recognition as a prominent supplier of SI2318DS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2318DS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2318DS-T1-E3 Vishay

SI2318DS-T1-E3 electronic component of Vishay
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Part No.SI2318DS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: 40V 3A 750mW 45mO@10V,3.9A N Channel SOT-23 MOSFETs ROHS
High-voltage, fast-switching N-channel power MOSFET in TO-220 package.
Datasheet: SI2318DS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5764 ea
Line Total: USD 0.58 
Availability - 206015
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 SI2318DS-T1-E3 More Buying Options & Price Grid(s)

Availability Price Quantity
1335
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4313
10 : USD 0.3464
30 : USD 0.31
100 : USD 0.2654
500 : USD 0.243
1000 : USD 0.231

206015
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5764
10 : USD 0.3938
100 : USD 0.2684
500 : USD 0.2299
1000 : USD 0.2123
3000 : USD 0.165
9000 : USD 0.1617
24000 : USD 0.1584
45000 : USD 0.1573

209
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 39
Multiples : 1
39 : USD 0.4926
100 : USD 0.2042

11640
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2022
9000 : USD 0.1889
24000 : USD 0.1865
45000 : USD 0.1855

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2318DS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2318DS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2318DS-T1-E3 is a N-Channel Power Mosfet from Vishay's Power MOSFET product line. It is a logic level transistor with a maximum current drain of 36A, to be used in applications such as power switching and light dimming. Its gate-source-drain breakdown voltage is 20V, and the on-state resistance (RDS(ON)) is 0.042 ohms at 10V. This device is available in the TO-220-3 (TAB) package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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