X-On Electronics has gained recognition as a prominent supplier of SI2323DS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2323DS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2323DS-T1-E3 Vishay

SI2323DS-T1-E3 electronic component of Vishay
SI2323DS-T1-E3 Vishay
SI2323DS-T1-E3 MOSFETs
SI2323DS-T1-E3  Semiconductors

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See Product Specifications
Part No. SI2323DS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 3.7A 0.039Ohm
Datasheet: SI2323DS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2603 ea
Line Total: USD 780.9 
Availability - 5820
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2016
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 0.7962
10 : USD 0.6263
30 : USD 0.5511
100 : USD 0.3559
500 : USD 0.3184
1000 : USD 0.2997

47450
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 1.035
10 : USD 0.8076
100 : USD 0.5467
500 : USD 0.4697
1000 : USD 0.407
3000 : USD 0.3542
6000 : USD 0.3509

1822
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 3
Multiples : 1
3 : USD 0.5082
25 : USD 0.4424
47 : USD 0.3836
128 : USD 0.3626
3000 : USD 0.3528

5820
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.2603

5149
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 130
Multiples : 1
130 : USD 0.5018
200 : USD 0.5005
500 : USD 0.4069
1000 : USD 0.3809
3000 : USD 0.3262

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SI2323DS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2323DS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The SI2323DS-T1-E3 MOSFET is a N-Channel enhancement mode Field-Effect Transistor (FET) manufactured by Vishay. It has a 20V drain-source voltage rating (Vdss) and a 3.7A drain-source current rating (Idss). The maximum on-state resistance (Rds,on) is 0.039O, meaning that it can handle higher power applications requiring low resistance. It is typically used for motor control, synchronous rectification, and High-Side and Low-Side switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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