X-On Electronics has gained recognition as a prominent supplier of Si2333CDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. Si2333CDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Si2333CDS-T1-E3 Vishay

Hot Si2333CDS-T1-E3 electronic component of Vishay
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Part No.Si2333CDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
Datasheet: Si2333CDS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1807 ea
Line Total: USD 542.1 
Availability - 2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2448
6000 : USD 0.1949
9000 : USD 0.1912
15000 : USD 0.1868
21000 : USD 0.1848
30000 : USD 0.183

7316
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8012
10 : USD 0.6585
100 : USD 0.4595
500 : USD 0.3579
1000 : USD 0.3301
5000 : USD 0.2898

2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1807
6000 : USD 0.1807
9000 : USD 0.1807
15000 : USD 0.1807
30000 : USD 0.1807

3687
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4093
10 : USD 0.3244
30 : USD 0.2886
100 : USD 0.2432
500 : USD 0.2245
1000 : USD 0.2113

78307
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6688
10 : USD 0.4697
100 : USD 0.3509
500 : USD 0.2816
1000 : USD 0.2717
3000 : USD 0.2508

2038
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.84
10 : USD 0.7434
25 : USD 0.5978
42 : USD 0.4116
115 : USD 0.3892

5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2448
6000 : USD 0.1949
9000 : USD 0.1912
15000 : USD 0.1868
21000 : USD 0.1848
30000 : USD 0.183

5820
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2799
6000 : USD 0.2337

11640
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.5542

   
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RoHS - XON
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Continuous Drain Current
Drain-Source Breakdown Voltage
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Rds On
Fall Time
Rise Time
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Typical Turn-Off Delay Time
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We are delighted to provide the Si2333CDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Si2333CDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si2333CDS www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES SOT-23 (TO-236) TrenchFET power MOSFET D Material categorization: 3 for definitions of compliance please see www.vishay.com/doc 99912 Available 2 APPLICATIONS S S Load switch 1 PA switch G G Top View Marking code: O3 PRODUCT SUMMARY D V (V) -12 DS P-Channel MOSFET R max. () at V = -4.5 V 0.035 DS(on) GS R max. () at V = -2.5 V 0.045 DS(on) GS R max. () at V = -1.8 V 0.059 DS(on) GS Q typ. (nC) 9 g a I (A) -5.1 D Configuration Single ORDERING INFORMATION Package SOT-23 (TO-236) Lead (Pb)-free Si2333CDS-T1-E3 Lead (Pb)-free and halogen-free Si2333CDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -12 DS V Gate-source voltage V 8 GS T = 25 C -7.1 C T = 70 C -5.7 C Continuous drain current (T = 150 C) I J D b, c T = 25 C -5.1 A b, c T = 70 C -4.0 A A Pulsed drain current I -20 DM T = 25 C -1.0 C Continuous source-drain diode current I S b, c T = 25 C -0.63 A T = 25 C 2.5 C T = 70 C 1.6 C Maximum power dissipation P W D b, c T = 25 C 1.25 A b, c T = 70 C 0.8 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, d Maximum junction-to-ambient t 5 s R 75 100 thJA C/W Maximum junction-to-case (drain) Steady state R 40 50 thJC Notes a. T = 25 C C b. Surface mounted on 1 x 1 FR4 board c. t = 5 s d. Maximum under steady state conditions is 166 C/W S20-0638-Rev. D, 24-Aug-2020 Document Number: 68717 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si2333CDS www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -12 - - V GS D DS V temperature coefficient V /T - -13 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -2.6 - GS(th) GS(th) J V = V , I = -250 A Gate-source threshold voltage V -0.4 - -1 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = -12 V, V = 0 V -- -1 DS GS Zero gate voltage drain current I A DSS V = -12 V, V = 0 V, T = 55 C -- -10 DS GS J a On-state drain current I V -5 V, V = -4.5 V -20 - - A D(on) DS GS V = -4.5 V, I = -5.1 A - 0.0285 0.035 GS D a Drain-source on-state resistance R V = -2.5 V, I = -4.5 A - 0.036 0.045 DS(on) GS D V = -1.8 V, I = -2.0 A - 0.046 0.059 GS D a g V = -5 V, I = -5.3 A - 18.5 - S Forward transconductance fs DS D b Dynamic Input capacitance C - 1225 - iss Output capacitance C V = -6 V, V = 0 V, f = 1 MHz - 315 - pF DS GS oss Reverse transfer capacitance C - 260 - rss V = -6 V, V = -4.5 V, I = -5.1 A - 15 25 DS GS D Total gate charge Q g -9 15 nC Gate-source charge Q -1V = -6 V, V = -2.5 V, I = -5.1 A.9- DS GS D gs Gate-drain charge Q -3.8 - gd Gate resistance R f = 1 MHz - 4 - g Turn-on delay time t -13 20 d(on) Rise time t -35 60 V = -6 V, R = 6 , I = -1 A, r DD L D ns V = -4.5 V, R = 1 Turn-off delay time t GEN g -45 70 d(off) Fall time t -12 20 f Drain-Source Body Diode Characteristics T = 25 C Continuous source-drain diode current I -- -1 S C A a Pulse diode forward current I -- -20 SM Body diode voltage V I = -1.0 A - -0.7 -1.2 V SD S Body diode reverse recovery time t - 32 50 ns rr Body diode reverse recovery charge Q -20 40 nC I = -1.0 A, di/dt = 100 A/s, rr F T = 25 C J Reverse recovery fall time t -16 - a ns Reverse recovery rise time t -16 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0638-Rev. D, 24-Aug-2020 Document Number: 68717 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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