X-On Electronics has gained recognition as a prominent supplier of Si2333CDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. Si2333CDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Si2333CDS-T1-E3 Vishay

Hot Si2333CDS-T1-E3 electronic component of Vishay
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Part No.Si2333CDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
Datasheet: Si2333CDS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1807 ea
Line Total: USD 542.1 
Availability - 5820
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2518
6000 : USD 0.2216
9000 : USD 0.2157
15000 : USD 0.2118

7316
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8266
10 : USD 0.6794
100 : USD 0.474
500 : USD 0.3693
1000 : USD 0.3405
5000 : USD 0.299

5820
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1807
6000 : USD 0.1807
9000 : USD 0.1807
15000 : USD 0.1807
30000 : USD 0.1807

1392
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4317
10 : USD 0.3435
30 : USD 0.3051
100 : USD 0.2591
500 : USD 0.238
1000 : USD 0.2246

78311
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6118
10 : USD 0.4393
100 : USD 0.3277
500 : USD 0.2818
1000 : USD 0.2737
3000 : USD 0.2725
24000 : USD 0.2657

2038
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.868
10 : USD 0.763
25 : USD 0.6132
42 : USD 0.4186
115 : USD 0.3948

5820
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2518
6000 : USD 0.2216
9000 : USD 0.2157
15000 : USD 0.2118

5820
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.2716
6000 : USD 0.2391

2910
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.5542

8730
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.5542

   
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Drain-Source Breakdown Voltage
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We are delighted to provide the Si2333CDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Si2333CDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si2333CDS www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES SOT-23 (TO-236) TrenchFET power MOSFET D Material categorization: 3 for definitions of compliance please see www.vishay.com/doc 99912 Available 2 APPLICATIONS S S Load switch 1 PA switch G G Top View Marking code: O3 PRODUCT SUMMARY D V (V) -12 DS P-Channel MOSFET R max. () at V = -4.5 V 0.035 DS(on) GS R max. () at V = -2.5 V 0.045 DS(on) GS R max. () at V = -1.8 V 0.059 DS(on) GS Q typ. (nC) 9 g a I (A) -5.1 D Configuration Single ORDERING INFORMATION Package SOT-23 (TO-236) Lead (Pb)-free Si2333CDS-T1-E3 Lead (Pb)-free and halogen-free Si2333CDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -12 DS V Gate-source voltage V 8 GS T = 25 C -7.1 C T = 70 C -5.7 C Continuous drain current (T = 150 C) I J D b, c T = 25 C -5.1 A b, c T = 70 C -4.0 A A Pulsed drain current I -20 DM T = 25 C -1.0 C Continuous source-drain diode current I S b, c T = 25 C -0.63 A T = 25 C 2.5 C T = 70 C 1.6 C Maximum power dissipation P W D b, c T = 25 C 1.25 A b, c T = 70 C 0.8 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, d Maximum junction-to-ambient t 5 s R 75 100 thJA C/W Maximum junction-to-case (drain) Steady state R 40 50 thJC Notes a. T = 25 C C b. Surface mounted on 1 x 1 FR4 board c. t = 5 s d. Maximum under steady state conditions is 166 C/W S20-0638-Rev. D, 24-Aug-2020 Document Number: 68717 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si2333CDS www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -12 - - V GS D DS V temperature coefficient V /T - -13 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -2.6 - GS(th) GS(th) J V = V , I = -250 A Gate-source threshold voltage V -0.4 - -1 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = -12 V, V = 0 V -- -1 DS GS Zero gate voltage drain current I A DSS V = -12 V, V = 0 V, T = 55 C -- -10 DS GS J a On-state drain current I V -5 V, V = -4.5 V -20 - - A D(on) DS GS V = -4.5 V, I = -5.1 A - 0.0285 0.035 GS D a Drain-source on-state resistance R V = -2.5 V, I = -4.5 A - 0.036 0.045 DS(on) GS D V = -1.8 V, I = -2.0 A - 0.046 0.059 GS D a g V = -5 V, I = -5.3 A - 18.5 - S Forward transconductance fs DS D b Dynamic Input capacitance C - 1225 - iss Output capacitance C V = -6 V, V = 0 V, f = 1 MHz - 315 - pF DS GS oss Reverse transfer capacitance C - 260 - rss V = -6 V, V = -4.5 V, I = -5.1 A - 15 25 DS GS D Total gate charge Q g -9 15 nC Gate-source charge Q -1V = -6 V, V = -2.5 V, I = -5.1 A.9- DS GS D gs Gate-drain charge Q -3.8 - gd Gate resistance R f = 1 MHz - 4 - g Turn-on delay time t -13 20 d(on) Rise time t -35 60 V = -6 V, R = 6 , I = -1 A, r DD L D ns V = -4.5 V, R = 1 Turn-off delay time t GEN g -45 70 d(off) Fall time t -12 20 f Drain-Source Body Diode Characteristics T = 25 C Continuous source-drain diode current I -- -1 S C A a Pulse diode forward current I -- -20 SM Body diode voltage V I = -1.0 A - -0.7 -1.2 V SD S Body diode reverse recovery time t - 32 50 ns rr Body diode reverse recovery charge Q -20 40 nC I = -1.0 A, di/dt = 100 A/s, rr F T = 25 C J Reverse recovery fall time t -16 - a ns Reverse recovery rise time t -16 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0638-Rev. D, 24-Aug-2020 Document Number: 68717 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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