Si2329DS Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( ) Q (Typ.) I (A) DS DS(on) g D Definition e 0.030 at V = - 4.5 V TrenchFET Power MOSFET GS - 6 100 % R Tested e g 0.036 at V = - 2.5 V GS - 6 Compliant to RoHS Directive 2002/95/EC - 8 0.048 at V = - 1.8 V - 5.9 11.8 nC GS APPLICATIONS 0.068 at V = - 1.5 V - 5 GS Load Switch 0.120 at V = - 1.2 V - 3.7 GS Low Voltage Gate Drive - Low On-Resistance TO-236 Battery Management in Portable Equipment (SOT-23) G 1 3 D S 2 Top View Si2329DS (D9)* * Marking Code Ordering Information: Si2329DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 8 DS V V Gate-Source Voltage 5 GS e T = 25 C - 6 C T = 70 C - 6 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 5.3 A b, c T = 70 C A - 4.2 A I Pulsed Drain Current (t = 300 s) - 20 DM T = 25 C - 2.1 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.0 A T = 25 C 2.5 C T = 70 C 1.6 C Maximum Power Dissipation P W D b, c T = 25 C 1.25 A b, c T = 70 C 0.8 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d 5 s R 75 100 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Foot (Drain) 40 50 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 C/W. e. Package limited. Document Number: 67690 www.vishay.com S11-0865-Rev. A, 02-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2329DS Vishay Siliconix MOSFET SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 8 V DS GS D V Temperature Coefficient V /T - 6 DS DS J mV/C I = - 250 A D V Temperature Coefficient V /T 2.3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.35 - 0.8 V GS(th) DS GS D I V = 0 V, V = 5 V Gate-Source Leakage 100 nA GSS DS GS V = - 8 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 5.3 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 5.3 A 0.025 0.030 GS D V = - 2.5 V, I = - 4.8 A 0.030 0.036 GS D a R V = - 1.8 V, I = - 4.2 A 0.037 0.048 Drain-Source On-State Resistance DS(on) GS D V = - 1.5 V, I = - 3.5 A 0.045 0.068 GS D V = - 1.2 V, I = - 0.8 A 0.060 0.120 GS D a g V = - 4 V, I = - 5.3 A 2.0 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1485 iss C V = - 4 V, V = 0 V, f = 1 MHz Output Capacitance 480 pF oss DS GS C Reverse Transfer Capacitance 435 rss V = - 4 V, V = - 4.5 V, I = - 5.3 A 19.3 29 DS GS D Q Total Gate Charge g 11.8 18 nC Q Gate-Source Charge V = - 4 V, V = - 2.5 V, I = - 5.3 A 1.7 gs DS GS D Q Gate-Drain Charge 6.2 gd R Gate Resistance f = 1 MHz 0.8 4.2 8.4 g t Turn-On Delay Time 20 30 d(on) Rise Time t 22 33 V = - 4 V, R = 0.9 r DD L ns I = - 4.2 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 46 69 d(off) Fall Time t 20 30 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 2.1 S C A a I - 20 Pulse Diode Forward Current SM V I = - 4.2 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 40 60 ns rr Body Diode Reverse Recovery Charge Q 26 39 nC rr I = - 4.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 17 a ns Reverse Recovery Rise Time t 23 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67690 2 S11-0865-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000