X-On Electronics has gained recognition as a prominent supplier of SI2315BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2315BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2315BDS-T1-E3 Vishay

SI2315BDS-T1-E3 electronic component of Vishay
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Part No.SI2315BDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 1.8V 3.2A 1.25W
Datasheet: SI2315BDS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.278 ea
Line Total: USD 1.39 
Availability - 169
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 5  Multiples: 5
Pack Size: 5

 SI2315BDS-T1-E3 More Buying Options & Price Grid(s)

Availability Price Quantity
20370
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.2106
6000 : USD 0.208
9000 : USD 0.2054
12000 : USD 0.2054
15000 : USD 0.2015

169
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 5
Multiples : 5
5 : USD 0.278
50 : USD 0.2262
150 : USD 0.2041
500 : USD 0.1766
3000 : USD 0.1643
6000 : USD 0.1569
9000 : USD 0.1551

145588
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7436
10 : USD 0.4994
100 : USD 0.3575
500 : USD 0.308
1000 : USD 0.2684
3000 : USD 0.2486
6000 : USD 0.2431
9000 : USD 0.242
24000 : USD 0.2332

876
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.63
10 : USD 0.539
25 : USD 0.4102
52 : USD 0.3318
142 : USD 0.3136
500 : USD 0.3108
1000 : USD 0.301

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2315BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2315BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2315BDS-T1-E3 is a dual N-channel enhancement mode Field-Effect Transistor (FET) constructed using advanced trench MOSFET technology. This FET is designed for high speed power switching applications. It features low on-state resistance and low gate-to-source capacitance. The device features a well-balanced performance and low RDS(ON). It has a maximum drain source voltage of 30V, with a maximum drain current of 3A, and a maximum power dissipation of 11.25W. The FET has a maximum thermal resistance of 2.5°C/W and an operating temperature range of -55°C to 125°C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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