X-On Electronics has gained recognition as a prominent supplier of SI2315BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2315BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2315BDS-T1-E3 Vishay

Name: SI2315BDS-T1-E3
Brand: Vishay
SKU: SI2315BDST1E3_Vishay
Availability: InStock
Rating: 5 (11 reviews)

SI2315BDS-T1-E3 electronic component of Vishay

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See Product Specifications

Part No.	SI2315BDS-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 1.8V 3.2A 1.25W
Datasheet:	SI2315BDS-T1-E3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.3264 ea
Line Total: USD 1.63

Availability - 1134
Ship by Wed. 05 Feb to Mon. 10 Feb

MOQ: 5 Multiples: 5
Pack Size: 5

SI2315BDS-T1-E3 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

20370

Ship by Wed. 29 Jan to Tue. 04 Feb

MOQ : 3000
Multiples : 3000

3000 : USD 0.2106
6000 : USD 0.2
9000 : USD 0.1975
12000 : USD 0.1975
15000 : USD 0.1937

1134

Ship by Wed. 05 Feb to Mon. 10 Feb

MOQ : 5
Multiples : 5

5 : USD 0.3264
50 : USD 0.2599
150 : USD 0.1983
500 : USD 0.1509
3000 : USD 0.1387
6000 : USD 0.1312
9000 : USD 0.1299

145234

Ship by Mon. 27 Jan to Wed. 29 Jan

MOQ : 1
Multiples : 1

1 : USD 0.845
10 : USD 0.5237
100 : USD 0.3289
500 : USD 0.2508
1000 : USD 0.2431
3000 : USD 0.2244

556

Ship by Mon. 27 Jan to Wed. 29 Jan

MOQ : 1
Multiples : 1

1 : USD 0.616
10 : USD 0.5348
25 : USD 0.4074
52 : USD 0.329
142 : USD 0.3108

Specifications

Manufacturer

Vishay Vishay

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

3 A 3 A

Vds - Drain-Source Breakdown Voltage

12 V 12 V

Rds On - Drain-Source Resistance

50 mOhms 50 mOhms

Transistor Polarity

P - Channel P - Channel

Vgs th - Gate-Source Threshold Voltage

450 mV 450 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

0.75 W 0.75 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

4.5 V 4.5 V

Qg - Gate Charge

8 nC 8 nC

Channel Mode

Enhancement Enhancement

Tradename

Trenchfet Trenchfet

Configuration

Single Single

Series

Si2 Si2

Transistor Type

1 P - Channel 1 P - Channel

Brand

Vishay / Siliconix Vishay / Siliconix

Forward Transconductance - Min

7 S 7 S

Cnhts

8541210000 8541210000

Fall Time

50 ns 50 ns

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Rise Time

35 ns 35 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

50 ns 50 ns

Typical Turn-On Delay Time

15 ns 15 ns

Notes:- Show Stocked Products With Similar Attributes.

SI2315BDS-T1-E3 Alternative Parts

We are delighted to provide the SI2315BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2315BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2315BDS-T1-E3 is a dual N-channel enhancement mode Field-Effect Transistor (FET) constructed using advanced trench MOSFET technology. This FET is designed for high speed power switching applications. It features low on-state resistance and low gate-to-source capacitance. The device features a well-balanced performance and low RDS(ON). It has a maximum drain source voltage of 30V, with a maximum drain current of 3A, and a maximum power dissipation of 11.25W. The FET has a maximum thermal resistance of 2.5°C/W and an operating temperature range of -55°C to 125°C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TECHNO
VIR
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Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
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Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
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Availability	Price	Buy Price	Quantity
20370 Ship by Wed. 29 Jan to Tue. 04 Feb MOQ : 3000 Multiples : 3000	3000 : USD 0.2106 6000 : USD 0.2 9000 : USD 0.1975 12000 : USD 0.1975 15000 : USD 0.1937

1134 Ship by Wed. 05 Feb to Mon. 10 Feb MOQ : 5 Multiples : 5	5 : USD 0.3264 50 : USD 0.2599 150 : USD 0.1983 500 : USD 0.1509 3000 : USD 0.1387 6000 : USD 0.1312 9000 : USD 0.1299

145234 Ship by Mon. 27 Jan to Wed. 29 Jan MOQ : 1 Multiples : 1	1 : USD 0.845 10 : USD 0.5237 100 : USD 0.3289 500 : USD 0.2508 1000 : USD 0.2431 3000 : USD 0.2244

556 Ship by Mon. 27 Jan to Wed. 29 Jan MOQ : 1 Multiples : 1	1 : USD 0.616 10 : USD 0.5348 25 : USD 0.4074 52 : USD 0.329 142 : USD 0.3108

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