X-On Electronics has gained recognition as a prominent supplier of SI2333DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2333DS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2333DS-T1-GE3 Vishay

Hot SI2333DS-T1-GE3 electronic component of Vishay
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Part No.SI2333DS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 12V 5.3A 1.25W 32mohm 4.5V
Datasheet: SI2333DS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5708 ea
Line Total: USD 0.57 
Availability - 2844
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2844
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5708
10 : USD 0.4634
30 : USD 0.4194
100 : USD 0.362
500 : USD 0.3371
1000 : USD 0.3218

112203
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8061
10 : USD 0.6705
100 : USD 0.5106
500 : USD 0.4267
1000 : USD 0.391
3000 : USD 0.3737
6000 : USD 0.3588
24000 : USD 0.3496

   
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Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the SI2333DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2333DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si2333DS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Available 0.032 at V = - 4.5 V - 5.3 GS TrenchFET Power MOSFET 0.042 at V = - 2.5 V - 12 - 4.6 GS 0.059 at V = - 1.8 V APPLICATIONS - 3.9 GS Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2333DS (E3)* * Marking Code Ordering Information: Si2333DS-T1-E3 (Lead (Pb)-free) Si2333DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 12 DS V V Gate-Source Voltage 8 GS T = 25 C - 5.3 - 4.1 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C - 4.2 - 3.3 A A Pulsed Drain Current I - 20 DM a, b I - 1.0 - 0.6 Continuous Source Current (Diode Conduction) S T = 25 C 1.25 0.75 A a, b P W Maximum Power Dissipation D T = 70 C 0.8 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 75 100 a R Maximum Junction-to-Ambient thJA Steady State 120 166 C/W R Maximum Junction-to-Foot (Drain) Steady State 40 50 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 72023 www.vishay.com S09-0130-Rev. C, 02-Feb-09 1Si2333DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 12 (BR)DSS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 0.40 - 1.0 GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 9.6 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 9.6 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 5.3 A 0.025 0.032 GS D a R V = - 2.5 V, I = - 4.6 A 0.033 0.042 Drain-Source On-Resistance DS(on) GS D V = - 1.8 V, I = - 2.0 A 0.046 0.059 GS D a g V = - 5 V, I = - 5.3 A 17 S Forward Transconductance fs DS D V I = - 1.0 A, V = 0 V Diode Forward Voltage - 0.7 - 1.2 V SD S GS b Dynamic Q Total Gate Charge 11.5 18 g V = - 6 V, V = - 4.5 V DS GS Gate-Source Charge Q 1.5 nC gs I - 5.3 A D Q Gate-Drain Charge 3.2 gd C Input Capacitance 1100 iss C V = - 6 V, V = 0 V, f = 1 MHz Output Capacitance 390 pF oss DS GS C Reverse Transfer Capacitance 300 rss c Switching t 25 40 d(on) Turn-On Time V = - 6 V, R = 6 DD L t 45 70 r I - 1.0 A, V = - 4.5 V ns D GEN t 72 110 d(off) R = 6 Turn-Off Time G t 60 90 f Notes: a. Pulse test: PW 300 s, duty cycle 2 %. b. For design aid only, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72023 2 S09-0130-Rev. C, 02-Feb-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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