New Product Si2334DS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.044 at V = 4.5 V 4.9 GS TrenchFET Power MOSFET 30 3.7 nC 0.050 at V = 2.5 V 4.6 100 % R Tested GS g Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter for Portable Devices TO-236 Load Switch (SOT-23) D G 1 3 D S 2 G Top View Si2334DS (PS)* S * Marking Code Ordering Information: Si2334DS-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 8 GS T = 25 C 4.9 C T = 70 C 3.9 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 4.2 A b, c T = 70 C 3.4 A A Pulsed Drain Current I 10 DM T = 25 C 1.4 C Continuous Source-Drain Diode Current I S b, c T = 25 C 1.1 A T = 25 C 1.7 C T = 70 C 1.1 C Maximum Power Dissipation P W D b, c T = 25 C 1.3 A b, c T = 70 C 0.8 A T , T - 55 to 150 C Operating Junction and Storage Temperature Range J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 80 100 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 60 75 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 C/W. Document Number: 66802 www.vishay.com S10-1533-Rev. A, 19-Jul-10 1New Product Si2334DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 2.8 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 0.2 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V 4.5 V, I = 4.2 A 0.035 0.044 GS D a R Drain-Source On-State Resistance DS(on) V 2.5 V, I = 4.0 A 0.040 0.050 GS D a g V = 15 V, I = 4.2 A 27 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 634 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 65 pF oss DS GS C Reverse Transfer Capacitance 30 rss V = 15 V, V = 4.5 V, I = 4.2 A 6.5 10 DS GS D Q Total Gate Charge g 3.7 6 nC Q Gate-Source Charge V = 15 V, V = 2.5 V, I = 4.2 A 1.2 gs DS GS D Q Gate-Drain Charge 0.8 gd R Gate Resistance f = 1 MHz 0.5 2.7 5.4 g t Turn-On Delay Time 612 d(on) t Rise Time V = 15 V, R = 4.4 10 20 r DD L I 3.4 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 16 24 d(off) Fall Time t 816 f ns t Turn-On Delay Time 48 d(on) Rise Time t 10 20 V = 15 V, R = 4.4 r DD L I 3.4 A, V = 8 V, R = 1 t Turn-Off Delay Time D GEN g 18 27 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 1.4 S C A Pulse Diode Forward Current I 10 SM V I = 3.4 A, V 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 11 20 ns rr Q Body Diode Reverse Recovery Charge 510 nC rr I = 3.4 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 7 a ns t Reverse Recovery Rise Time 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66802 2 S10-1533-Rev. A, 19-Jul-10