X-On Electronics has gained recognition as a prominent supplier of SI2324DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2324DS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2324DS-T1-GE3 Vishay

SI2324DS-T1-GE3 electronic component of Vishay
SI2324DS-T1-GE3 Vishay
SI2324DS-T1-GE3 MOSFETs
SI2324DS-T1-GE3  Semiconductors

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Part No. SI2324DS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V Vds 20V Vgs SOT-23
Datasheet: SI2324DS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3446 ea
Line Total: USD 0.34 
Availability - 180930
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1704
Ship by Fri. 18 Apr to Wed. 23 Apr
MOQ : 1
Multiples : 1
1 : USD 0.4191
10 : USD 0.3651
30 : USD 0.3414
100 : USD 0.2686
500 : USD 0.2307
1000 : USD 0.2254

180930
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.3446
10 : USD 0.2877
100 : USD 0.2358
250 : USD 0.2245
500 : USD 0.2128
1000 : USD 0.2021
3000 : USD 0.1862

11112
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.826
5 : USD 0.566
50 : USD 0.4604
53 : USD 0.3358
144 : USD 0.3182

8730
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.214
6000 : USD 0.2116

11640
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.2116
6000 : USD 0.209

   
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We are delighted to provide the SI2324DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2324DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si2324DS Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R ( ) Q (Typ.) I (A) DS DS(on) g 100 % R Tested D g 100 % UIS Tested 0.234 at V = 10 V 2.3 GS Material categorization: 0.267 at V = 6 V 100 2.1 2.9 nC GS For definitions of compliance please see 0.278 at V = 4.5 V 1.7 www.vishay.com/doc 99912 GS APPLICATIONS TO-236 DC/DC Converters (SOT-23) Load Switch LED Backlighting in LCD TVs G 1 3 D S 2 Top View Si2324DS (D4)* * Marking Code Ordering Information: Si2324DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 100 DS V V Gate-Source Voltage 20 GS T = 25 C 2.3 C T = 70 C 1.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 1.6 A b, c T = 70 C 1.3 A A I Pulsed Drain Current (t = 300 s) 5 DM T = 25 C 2.1 C I Continuous Source-Drain Diode Current S b, c T = 25 C 1.0 A Single Pulse Avalanche Current I 5 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 1.25 AS T = 25 C 2.5 C T = 70 C 1.6 C P Maximum Power Dissipation W D b, c T = 25 C 1.25 A b, c T = 70 C 0.8 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d 5 s R 75 100 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 40 50 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 C/W. Document Number: 67691 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S12-1140-Rev. B, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2324DS Vishay Siliconix MOSFET SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS DS D V Temperature Coefficient V /T 105 DS DS J mV/C I = 250 A D V Temperature Coefficient V /T - 5.2 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = 4.5 V 5A On-State Drain Current D(on) DS GS V = 10 V, I = 1.5 A 0.195 0.234 GS D a R V = 6 V, I = 1 A 0.222 0.267 Drain-Source On-State Resistance DS(on) GS D V = 4.5 V, I = 0.5 A 0.231 0.278 GS D a g V = 20 V, I = 1.5 A 2.0 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 190 iss Output Capacitance C V = 50 V, V = 0 V, f = 1 MHz 22 pF oss DS GS C Reverse Transfer Capacitance 13 rss V = 50 V, V = 10 V, I = 1.6 A 5.2 10.4 DS GS D Q Total Gate Charge g 2.9 5.8 nC Q Gate-Source Charge V = 50 V, V = 4.5 V, I = 1.6 A 0.75 gs DS GS D Q Gate-Drain Charge 1.4 gd R Gate Resistance f = 1 MHz 0.3 1.4 2.8 g t Turn-On Delay Time 30 45 d(on) t Rise Time V = 50 V, R = 39 26 39 r DD L I = 1.3 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 17 26 d(off) Fall Time t 12 20 f ns t Turn-On Delay Time 612 d(on) Rise Time t 10 20 V = 50 V, R = 39 r DD L I = 1.3 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 10 20 d(off) Fall Time t 612 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 2.1 S C A a I - 20 Pulse Diode Forward Current SM Body Diode Voltage V I = 1.3 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 22 33 ns rr Body Diode Reverse Recovery Charge Q 21 32 nC rr I = 1.3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 16 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67691 For technical questions, contact: pmostechsupport vishay.com 2 S12-1140-Rev. B, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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