Si2323CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Q (Typ.) 100 % R Tested I (A) DS DS(on) g D g Material categorization: e 0.039 at V = -4.5 V GS -6 For definitions of compliance please see -20 0.050 at V = -2.5 V 9 nC -5.8 www.vishay.com/doc 99912 GS 0.063 at V = -1.8 V -5.1 GS APPLICATIONS Load Switch TO-236 PA Switch (SOT-23) DC/DC Converters G 1 3 D S 2 Top View Si2323CDS (P3)* * Marking Code Ordering Information: Si2323CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage -20 DS V V Gate-Source Voltage 8 GS e T = 25 C C -6 T = 70 C -5.2 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C -4.6 A b, c T = 70 C A -3.7 A I Pulsed Drain Current DM -20 T = 25 C -2.1 C Continuous Source-Drain Diode Current I S b, c T = 25 C -1 A T = 25 C 2.5 C T = 70 C C 1.6 P Maximum Power Dissipation W D b, c T = 25 C 1.25 A b, c T = 70 C 0.8 A Operating Junction and Storage Temperature Range T , T C -55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R 5 s 75 100 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Foot (Drain) 40 50 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 C/W. e. Package limited. Document Number: 65700 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-2081-Rev. B, 30-Sep-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2323CDS Vishay Siliconix MOSFET SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = -250 A Drain-Source Breakdown Voltage -20 V DS DS D V Temperature Coefficient V /T -14 DS DS J mV/C I = -250 A D V Temperature Coefficient V /T 2.4 GS(th) GS(th) J V V = V , I = -250 A Gate-Source Threshold Voltage -0.4 -1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = -20 V, V = 0 V -1 DS GS I Zero Gate Voltage Drain Current A DSS V = -20 V, V = 0 V, T = 55 C -10 DS GS J a I V -5 V, V = -4.5 V -20 A On-State Drain Current D(on) DS GS V = -4.5 V, I = -4.6 A 0.032 0.039 GS D a R V = -2.5 V, I = -4.1 A 0.041 0.050 Drain-Source On-State Resistance DS(on) GS D V = -1.8 V, I = -3.6 A 0.050 0.063 GS D a g V = -5 V, I = -4.6 A 20 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1090 iss Output Capacitance C V = -10 V, V = 0 V, f = 1 MHz 155 pF oss DS GS C Reverse Transfer Capacitance 135 rss V = -10 V, V = -4.5 V, I = -4.6 A 16 25 DS GS D Q Total Gate Charge g 9.3 15 nC Q Gate-Source Charge V = -10 V, V = -2.5 V, I = -4.6 A 2.5 gs DS GS D Q Gate-Drain Charge 3.2 gd R Gate Resistance f = 1 MHz 0.8 4.1 8.2 g t Turn-On Delay Time 15 23 d(on) t Rise Time V = -10 V, R = 2.7 23 35 r DD L ns I = -3.7 A, V = -4.5 V, R = 1 t Turn-Off Delay Time D GEN g 40 60 d(off) t Fall Time 12 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current -2.1 S C A a I -20 Pulse Diode Forward Current SM V I = -3.7 A Body Diode Voltage -0.8 -1.2 V SD S t Body Diode Reverse Recovery Time 30 45 ns rr Body Diode Reverse Recovery Charge Q 20 40 nC rr I = -3.7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 17 a ns Reverse Recovery Rise Time t 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 65700 2 S13-2081-Rev. B, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000