X-On Electronics has gained recognition as a prominent supplier of SI2308BDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2308BDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2308BDS-T1-GE3 Vishay

Name: SI2308BDS-T1-GE3
Brand: Vishay
SKU: SI2308BDST1GE3_Vishay
Availability: InStock
Rating: 5 (11 reviews)

SI2308BDS-T1-GE3 electronic component of Vishay

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Part No.	SI2308BDS-T1-GE3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 60V Vds 20V Vgs SOT-23
Datasheet:	SI2308BDS-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.382 ea
Line Total: USD 1.91

Availability - 5897
Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ: 5 Multiples: 5
Pack Size: 5

SI2308BDS-T1-GE3 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

58200

Ship by Fri. 07 Feb to Thu. 13 Feb

MOQ : 3000
Multiples : 3000

3000 : USD 0.169
6000 : USD 0.1612
9000 : USD 0.16
12000 : USD 0.1587
15000 : USD 0.1562

5897

Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ : 5
Multiples : 5

5 : USD 0.382
50 : USD 0.3092
150 : USD 0.2147
500 : USD 0.1847
3000 : USD 0.1382
6000 : USD 0.1301

202191

Ship by Wed. 05 Feb to Fri. 07 Feb

MOQ : 1
Multiples : 1

1 : USD 0.6237
10 : USD 0.4612
100 : USD 0.3013
500 : USD 0.2552
1000 : USD 0.2233
3000 : USD 0.1947
9000 : USD 0.1859
24000 : USD 0.1661

5633

Ship by Wed. 05 Feb to Fri. 07 Feb

MOQ : 1
Multiples : 1

1 : USD 0.658
3 : USD 0.5782
10 : USD 0.5278
25 : USD 0.4746
69 : USD 0.2548

34920

Ship by Fri. 07 Feb to Thu. 13 Feb

MOQ : 3000
Multiples : 3000

3000 : USD 0.1894
9000 : USD 0.187

Specifications

Manufacturer

Vishay Vishay

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

2.3 A 2.3 A

Vds - Drain-Source Breakdown Voltage

60 V 60 V

Rds On - Drain-Source Resistance

156 mOhms 156 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

1 V 1 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1.66 W 1.66 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

6.8 nC 6.8 nC

Channel Mode

Enhancement Enhancement

Tradename

Trenchfet Trenchfet

Configuration

Single Single

Series

Si2 Si2

Transistor Type

1 N - Channel 1 N - Channel

Brand

Vishay / Siliconix Vishay / Siliconix

Forward Transconductance - Min

5 S 5 S

Cnhts

8541210000 8541210000

Fall Time

7 ns 7 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

10 ns 10 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

10 ns 10 ns

Typical Turn-On Delay Time

4 ns 4 ns

Category

MOSFET MOSFET

Brand Category

Vishay Vishay

Notes:- Show Stocked Products With Similar Attributes.

SI2308BDS-T1-GE3 Alternative Parts

We are delighted to provide the SI2308BDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2308BDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Vishay SI2308BDS-T1-GE3 is an optically isolated N-Channel MOSFET power switch that has a maximum on-state resistance of 200 mO. This MOSFET has a maximum drain-source breakdown voltage of 30 V and a drain current of 8 A. The device is housed in an SO-8 surface mount package which has a resistance to thermal shock of 260°C. It features a built-in isolated power supply and two logic inputs for optimal control. Furthermore, it is UL recognized and RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
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Vishay / Siliconix
Vishay / Spectrol
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VISHAY ROEDERSTEIN
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VishayBC Components
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Availability	Price	Buy Price	Quantity
58200 Ship by Fri. 07 Feb to Thu. 13 Feb MOQ : 3000 Multiples : 3000	3000 : USD 0.169 6000 : USD 0.1612 9000 : USD 0.16 12000 : USD 0.1587 15000 : USD 0.1562

5897 Ship by Fri. 14 Feb to Wed. 19 Feb MOQ : 5 Multiples : 5	5 : USD 0.382 50 : USD 0.3092 150 : USD 0.2147 500 : USD 0.1847 3000 : USD 0.1382 6000 : USD 0.1301

202191 Ship by Wed. 05 Feb to Fri. 07 Feb MOQ : 1 Multiples : 1	1 : USD 0.6237 10 : USD 0.4612 100 : USD 0.3013 500 : USD 0.2552 1000 : USD 0.2233 3000 : USD 0.1947 9000 : USD 0.1859 24000 : USD 0.1661

5633 Ship by Wed. 05 Feb to Fri. 07 Feb MOQ : 1 Multiples : 1	1 : USD 0.658 3 : USD 0.5782 10 : USD 0.5278 25 : USD 0.4746 69 : USD 0.2548

34920 Ship by Fri. 07 Feb to Thu. 13 Feb MOQ : 3000 Multiples : 3000	3000 : USD 0.1894 9000 : USD 0.187

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