X-On Electronics has gained recognition as a prominent supplier of SI2308BDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2308BDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2308BDS-T1-GE3 Vishay

SI2308BDS-T1-GE3 electronic component of Vishay
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Part No.SI2308BDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V Vds 20V Vgs SOT-23
Datasheet: SI2308BDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2913 ea
Line Total: USD 1.46 
Availability - 10228
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5

 SI2308BDS-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Quantity
12546
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 0.5732
50 : USD 0.4808
100 : USD 0.4095
500 : USD 0.276
1500 : USD 0.2711

10228
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2913
50 : USD 0.2395
150 : USD 0.2173
500 : USD 0.1896
3000 : USD 0.1404
6000 : USD 0.133

268316
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4928
10 : USD 0.363
100 : USD 0.2772
500 : USD 0.2343
1000 : USD 0.198
3000 : USD 0.165
45000 : USD 0.1606

3602
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.672
3 : USD 0.588
10 : USD 0.5334
25 : USD 0.4802
66 : USD 0.2604

52380
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2072
6000 : USD 0.1954
9000 : USD 0.1837
15000 : USD 0.1809
21000 : USD 0.1793

1428
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 41
Multiples : 1
41 : USD 0.522
100 : USD 0.3957
250 : USD 0.3804
500 : USD 0.3049
1000 : USD 0.2093

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2308BDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2308BDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Vishay SI2308BDS-T1-GE3 is an optically isolated N-Channel MOSFET power switch that has a maximum on-state resistance of 200 mO. This MOSFET has a maximum drain-source breakdown voltage of 30 V and a drain current of 8 A. The device is housed in an SO-8 surface mount package which has a resistance to thermal shock of 260°C. It features a built-in isolated power supply and two logic inputs for optimal control. Furthermore, it is UL recognized and RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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