X-On Electronics has gained recognition as a prominent supplier of SI2308BDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2308BDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2308BDS-T1-GE3 Vishay

SI2308BDS-T1-GE3 electronic component of Vishay
SI2308BDS-T1-GE3 Vishay
SI2308BDS-T1-GE3 MOSFETs
SI2308BDS-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI2308BDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V Vds 20V Vgs SOT-23
Datasheet: SI2308BDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3624 ea
Line Total: USD 1.81 
Availability - 16819
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
16819
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ : 5
Multiples : 5
5 : USD 0.3624
50 : USD 0.2929
150 : USD 0.2029
500 : USD 0.1743
3000 : USD 0.1299
6000 : USD 0.1222

193472
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 0.6125
10 : USD 0.4875
100 : USD 0.3404
500 : USD 0.2618
1000 : USD 0.2123
3000 : USD 0.1837
9000 : USD 0.1716

1074
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 0.658
3 : USD 0.5838
10 : USD 0.5306
25 : USD 0.4774
70 : USD 0.2562

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SI2308BDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2308BDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI2308BDS-T1-GE3 is an optically isolated N-Channel MOSFET power switch that has a maximum on-state resistance of 200 mO. This MOSFET has a maximum drain-source breakdown voltage of 30 V and a drain current of 8 A. The device is housed in an SO-8 surface mount package which has a resistance to thermal shock of 260°C. It features a built-in isolated power supply and two logic inputs for optimal control. Furthermore, it is UL recognized and RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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