X-On Electronics has gained recognition as a prominent supplier of SI2308BDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2308BDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2308BDS-T1-GE3 Vishay

SI2308BDS-T1-GE3 electronic component of Vishay
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Part No.SI2308BDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V Vds 20V Vgs SOT-23
Datasheet: SI2308BDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2675 ea
Line Total: USD 1.34 
Availability - 9252
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
12544
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 5
Multiples : 1
5 : USD 0.5155
50 : USD 0.3997
100 : USD 0.3021
500 : USD 0.2561
1500 : USD 0.2514

174600
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.169
6000 : USD 0.1677
9000 : USD 0.1664
12000 : USD 0.1651
15000 : USD 0.1625

9252
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 5
Multiples : 5
5 : USD 0.2675
50 : USD 0.2199
150 : USD 0.1995
500 : USD 0.174
3000 : USD 0.129
6000 : USD 0.1222

215455
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5764
10 : USD 0.3927
100 : USD 0.2739
500 : USD 0.2442
1000 : USD 0.2046
3000 : USD 0.1716
9000 : USD 0.1694

5822
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.672
3 : USD 0.588
10 : USD 0.5334
25 : USD 0.4802
67 : USD 0.2576

49470
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.2022
6000 : USD 0.1959
9000 : USD 0.1818
15000 : USD 0.181
21000 : USD 0.1793

361
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 41
Multiples : 1
41 : USD 0.5234
100 : USD 0.3843
250 : USD 0.2042

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
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We are delighted to provide the SI2308BDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2308BDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI2308BDS-T1-GE3 is an optically isolated N-Channel MOSFET power switch that has a maximum on-state resistance of 200 mO. This MOSFET has a maximum drain-source breakdown voltage of 30 V and a drain current of 8 A. The device is housed in an SO-8 surface mount package which has a resistance to thermal shock of 260°C. It features a built-in isolated power supply and two logic inputs for optimal control. Furthermore, it is UL recognized and RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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