X-On Electronics has gained recognition as a prominent supplier of SI2312BDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2312BDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2312BDS-T1-GE3 Vishay

SI2312BDS-T1-GE3 electronic component of Vishay
SI2312BDS-T1-GE3 Vishay
SI2312BDS-T1-GE3 MOSFETs
SI2312BDS-T1-GE3 Semiconductors

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See Product Specifications
Part No. SI2312BDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2312BDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3491 ea
Line Total: USD 1.75 
Availability - 4495
Ship by Wed. 22 Jan to Mon. 27 Jan
MOQ: 5  Multiples: 5
Pack Size: 5

 SI2312BDS-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Quantity
98940
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1898
6000 : USD 0.1872
9000 : USD 0.1859
12000 : USD 0.1846
15000 : USD 0.182

4495
Ship by Wed. 22 Jan to Mon. 27 Jan
MOQ : 5
Multiples : 5
5 : USD 0.3491
50 : USD 0.2832
150 : USD 0.2552
500 : USD 0.1951
3000 : USD 0.1795
6000 : USD 0.1701
9000 : USD 0.1677

577965
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5951
10 : USD 0.396
100 : USD 0.2849
500 : USD 0.2519
1000 : USD 0.2123
3000 : USD 0.1848
9000 : USD 0.1749
24000 : USD 0.1716

5820
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.2071
9000 : USD 0.1828
24000 : USD 0.1807

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Maximum Operating Temperature
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Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
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Rds On
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2312BDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2312BDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2312BDS-T1-GE3 is an N-Channel, 20 V, 3.9A (Ta), 750mW (Ta), Surface Mount SOT-23-3 (TO-236) MOSFET, designed and manufactured by Vishay. It is constructed of low RDS(on) to minimize conduction losses and is designed to be used in a variety of low and medium current applications. It has a user-friendly footprint and is capable of handling fast switching speeds. Its advanced features like fast intrinsic diode and ESD protection ensures it is robust and highly reliable. This MOSFET provides a great balance between performance and cost effectiveness.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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