Product Information

SI2312BDS-T1-GE3

SI2312BDS-T1-GE3 electronic component of Vishay

Datasheet
N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5347 ea
Line Total: USD 0.53

588065 - Global Stock
Ships to you between
Tue. 21 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1248 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 54
Multiples : 1
54 : USD 0.598
75 : USD 0.5265
300 : USD 0.4745
1500 : USD 0.403

11640 - WHS 2


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2157

9636 - WHS 3


Ships to you between
Wed. 22 May to Mon. 27 May

MOQ : 5
Multiples : 5
5 : USD 0.3759
50 : USD 0.3054
150 : USD 0.2751
500 : USD 0.2109
3000 : USD 0.194
6000 : USD 0.184

588065 - WHS 4


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 0.5347
10 : USD 0.4416
100 : USD 0.322
500 : USD 0.2611
1000 : USD 0.2185
3000 : USD 0.1944
9000 : USD 0.1874
24000 : USD 0.1828

81480 - WHS 5


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2074
21000 : USD 0.2032

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
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Configuration
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
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Additional Infomation About Product

The SI2312BDS-T1-GE3 is an N-Channel, 20 V, 3.9A (Ta), 750mW (Ta), Surface Mount SOT-23-3 (TO-236) MOSFET, designed and manufactured by Vishay. It is constructed of low RDS(on) to minimize conduction losses and is designed to be used in a variety of low and medium current applications. It has a user-friendly footprint and is capable of handling fast switching speeds. Its advanced features like fast intrinsic diode and ESD protection ensures it is robust and highly reliable. This MOSFET provides a great balance between performance and cost effectiveness.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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