X-On Electronics has gained recognition as a prominent supplier of SI2372DS-T1-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI2372DS-T1-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI2372DS-T1-GE3 Vishay

SI2372DS-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI2372DS-T1-GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET N-Channel 30-V (D-S)
Datasheet: SI2372DS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.0811
10 : USD 0.0773
25 : USD 0.0768
50 : USD 0.0762
100 : USD 0.0757
250 : USD 0.0741
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 1.1965
10 : USD 0.7005
100 : USD 0.1952
500 : USD 0.1594
1000 : USD 0.1223
3000 : USD 0.1073
6000 : USD 0.1019
9000 : USD 0.0992
24000 : USD 0.0925
N/A

Obsolete
0 - WHS 3

MOQ : 87
Multiples : 87
87 : USD 0.0794
100 : USD 0.0757
250 : USD 0.0741
N/A

Obsolete
     
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Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET d V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g 100 % R tested g 0.033 at V = 10 V 5.3 GS Material categorization: 30 0.038 at V = 6 V 4.9 2.9 nC GS For definitions of compliance please see 0.043 at V = 4.5 V 4.6 GS www.vishay.com/doc 99912 SOT-23 (TO-236) APPLICATIONS D DC/DC converter D 3 Load switch Power management G 2 S 1 S G Top View N-Channel MOSFET Marking Code: F4 Ordering Information: Si2372DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 5.3 C T = 70 C 4.2 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 4 A a, b T = 70 C 3.2 A A Pulsed Drain Current (t = 100 s) I 25 DM T = 25 C 1.4 C Continuous Source-Drain Diode Current I S a, b T = 25 C 0.8 A T = 25 C 1.7 C T = 70 C 1.1 C Maximum Power Dissipation P W D a, b T = 25 C 0.96 A a, b T = 70 C 0.62 A Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a, c Maximum Junction-to-Ambient t 5 s R 100 130 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 60 75 thJF Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 175 C/W. d. T = 25 C C S14-0769-Rev. A, 14-Apr-14 Document Number: 63244 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2372DS www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 - - V DS GS D V Temperature Coefficient V /T -34 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --5 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 30 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 10 - - A D(on) DS GS V = 10 V, I = 3 A - 0.027 0.033 GS D a Drain-Source On-State Resistance R V = 6 V, I = 3 A - 0.031 0.038 DS(on) GS D V = 4.5 V, I = 2 A - 0.035 0.043 GS D a Forward Transconductance g V = 15 V, I = 4 A - 18 - S fs DS D b Dynamic Input Capacitance C - 288 - iss Output Capacitance C -7V = 15 V, V = 0 V, f = 1 MHz3- pF oss DS GS Reverse Transfer Capacitance C -26- rss V = 15 V, V = 10 V, I = 4 A - 5.9 8.9 DS GS D Total Gate Charge Q g -2.9 4.5 nC Gate-Source Charge Q -1V = 15 V, V = 4.5 V, I = 4 A.1- gs DS GS D Gate-Drain Charge Q -0.9 - gd Gate Resistance R f = 1 MHz 0.2 0.9 1.8 g Turn-On Delay Time t -4 8 d(on) Rise Time t -1726 r V = 15 V, R = 4.7 DD L I 3.2 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t -816 d(off) Fall Time t -8 16 f ns Turn-On Delay Time t -10 20 d(on) Rise Time t -3045 r V = 15 V, R = 4.7 DD L I 3.2 A, V = 4.5 V, R = 1 D GEN g Turn-Off Delay Time t -816 d(off) Fall Time t -10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 1.4 S C A Pulse Diode Forward Current (t = 100 s) I -- 25 SM Body Diode Voltage V I = 3.2 A, V = 0 V - 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t -12 20 ns rr Body Diode Reverse Recovery Charge Q -4 8 nC rr I = 3.2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -8 - a ns Reverse Recovery Rise Time t -4 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0769-Rev. A, 14-Apr-14 Document Number: 63244 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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