Si2399DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition e 0.034 at V = - 10 V - 6 GS TrenchFET Power MOSFET e - 20 0.045 at V = - 4.5 V - 6 10 nC GS 100 % R Tested g 0.067 at V = - 2.5 V - 5.2 Compliant to RoHS Directive 2002/95/EC GS APPLICATIONS Load Switch PA Switch DC/DC Converters TO-236 (SOT-23) G 1 3 D S 2 Top View Si2399DS (O1)* * Marking Code Ordering Information: Si2399DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 12 GS e T = 25 C - 6 C T = 70 C - 5.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 5.1 A b, c T = 70 C A - 4.1 A I Pulsed Drain Current - 20 DM T = 25 C - 2.1 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 1.0 A T = 25 C 2.5 C T = 70 C 1.6 C P Maximum Power Dissipation W D b, c T = 25 C 1.25 A b, c T = 70 C 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d 5 s R 75 100 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Foot (Drain) 40 50 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 C/W. e. Package limited. Document Number: 67343 www.vishay.com S11-0239-Rev. A, 14-Feb-11 1Si2399DS Vishay Siliconix MOSFET SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS DS D V Temperature Coefficient V /T - 13.4 DS DS J mV/C I = - 250 A D V Temperature Coefficient V /T 2.9 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.6 - 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 5.1 A 0.028 0.034 GS D a R V = - 4.5 V, I = - 4.5 A 0.037 0.045 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 3.7 A 0.055 0.067 GS D a g V = - 5 V, I = - 5.1 A 15 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 835 iss Output Capacitance C V = - 10 V, V = 0 V, f = 1 MHz 180 pF oss DS GS C Reverse Transfer Capacitance 155 rss V = - 10 V, V = - 4.5 V, I = - 5.1 A 10 20 DS GS D Q Total Gate Charge g 6.4 9.6 nC Q Gate-Source Charge V = - 10 V, V = - 2.5 V, I = - 5.1 A 1.7 gs DS GS D Q Gate-Drain Charge 3.4 gd R Gate Resistance f = 1 MHz 0.9 4.4 8.8 g t Turn-On Delay Time 22 33 d(on) t Rise Time V = - 10 V, R = 2.4 20 30 r DD L ns I = - 4.1 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 28 42 d(off) Fall Time t 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 2.1 S C A a I - 20 Pulse Diode Forward Current SM V I = - 4.1 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 23 35 ns rr Q Body Diode Reverse Recovery Charge 12 20 nC rr I = - 4.1 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns Reverse Recovery Rise Time t 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67343 2 S11-0239-Rev. A, 14-Feb-11