X-On Electronics has gained recognition as a prominent supplier of SI3421DV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3421DV-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3421DV-T1-GE3 Vishay

SI3421DV-T1-GE3 electronic component of Vishay
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Part No.SI3421DV-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET -30V .0192ohm-10V -8A P-Ch
Datasheet: SI3421DV-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6413 ea
Line Total: USD 0.64 
Availability - 17311
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.2022
9000 : USD 0.1875
24000 : USD 0.1778

8730
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.182
6000 : USD 0.1794
9000 : USD 0.1781
12000 : USD 0.1781
15000 : USD 0.1742

904
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4703
10 : USD 0.382
30 : USD 0.3439
100 : USD 0.2958
500 : USD 0.24
1000 : USD 0.2267

17311
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6413
10 : USD 0.4323
100 : USD 0.286
500 : USD 0.2266
1000 : USD 0.2068
3000 : USD 0.1606
9000 : USD 0.1595
24000 : USD 0.154

537
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.686
5 : USD 0.5236
10 : USD 0.4592
50 : USD 0.3934
57 : USD 0.301
157 : USD 0.2842
500 : USD 0.273

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SI3421DV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3421DV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si3421DV Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET d,e V (V) R ( ) Max. Q (Typ.) I (A) DS DS(on) g 100 % R and UIS Tested D g Material categorization: 0.0192 at V = -10 V -8 GS For definitions of compliance please see -30 0.0232 at V = -6 V -8 21 nC GS www.vishay.com/doc 99912 0.0270 at V = -4.5 V -8 Available GS TSOP-6 APPLICATIONS Top View Load Switches S D D 1 6 Adaptor Switch DC/DC Converter 3 mm D D 5 For Mobile Computing/Consumer 2 G Marking Code G S 3 4 BI XX Lot Traceability 2.85 mm and Date Code D Part Code Ordering Information: P-Channel MOSFET Si3421DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V -30 DS V V Gate-Source Voltage 20 GS e T = 25 C -8 C e T = 70 C -8 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C -8.3 A a, b T = 70 C -6.7 A A I Pulsed Drain Current (t = 100 s) -50 DM T = 25 C -3.5 C I Continuous Source-Drain Diode Current S a, b T = 25 C -1.7 A Avalanche Current I -15 AS L = 0.1 mH Single-Pulse Avalanche Energy E 11.25 mJ AS T = 25 C 4.2 C T = 70 C 2.7 C P Maximum Power Dissipation W D a, b T = 25 C 2 A a, b T = 70 C 1.3 A T , T Operating Junction and Storage Temperature Range -55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c Maximum Junction-to-Ambient t 10 s R 40 62.5 thJA C/W R Maximum Junction-to-Foot Steady State 25 30 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 110 C/W. d. Based on T = 25 C. C e. Package limited. Document Number: 62921 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-2289-Rev. A, 04-Nov-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi3421DV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -30 V DS GS D V Temperature Coefficient V /T -18 DS DS J I = -250 A mV/C D V Temperature Coefficient V /T 4.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -1 -3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = -30 V, V = 0 V -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -30 V, V = 0 V, T = 55 C -5 DS GS J a I V -10 V, V = -10 V -30 A On-State Drain Current D(on) DS GS V = -10 V, I = -7 A 0.0160 0.0192 GS D a R V = -6 V, I = -5 A 0.0193 0.0232 Drain-Source On-State Resistance DS(on) GS D V = -4.5 V, I = -3 A 0.0225 0.0270 GS D a g V = -10 V, I = -7 A 30 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2580 iss C V = -15 V, V = 0 V, f = 1 MHz Output Capacitance 256 pF oss DS GS C Reverse Transfer Capacitance 225 rss V = -15 V, V = -10 V, I = -8.3 A 46 69 DS GS D Q Total Gate Charge g 21 32 nC Q V = -15 V, V = -4.5 V, I = -8.3 A Gate-Source Charge 7 gs DS GS D Q Gate-Drain Charge 6.1 gd R Gate Resistance f = 1 MHz 1.6 8 16 g t Turn-On Delay Time 714 d(on) t V = -15 V, R = 2.24 Rise Time 918 r DD L t I -6.7 A, V = -10 V, R = 1 Turn-Off DelayTime 55 83 d(off) D GEN g t Fall Time 13 20 f ns t Turn-On Delay Time 58 87 d(on) t V = -15 V, R = 2.24 Rise Time 40 60 r DD L t I -6.7 A, V = -4.5 V, R = 1 Turn-Off DelayTime 36 54 d(off) D GEN g t Fall Time 17 26 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C -3.5 S C A Pulse Diode Forward Current (t = 100 s) I -50 SM Body Diode Voltage V I = -6.7 A, V = 0 V -0.85 -1.2 V SD S GS Body Diode Reverse Recovery Time t 21.5 33 ns rr Body Diode Reverse Recovery Charge Q 12 20 nC I = -6.7 A, dI/dt = 100 A/s, rr F T = 25 C Reverse Recovery Fall Time t 10.5 J a ns Reverse Recovery Rise Time t 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62921 2 S13-2289-Rev. A, 04-Nov-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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