Si3424BDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ( )I (A) Q (Typ.) 100 % R Tested DS DS(on) D g g Material categorization: a 0.028 at V = 10 V GS 8 30 6.2 For definitions of compliance please see 0.038 at V = 4.5 V 7 GS www.vishay.com/doc 99912 APPLICATIONS Load Switch for Portable Devices TSOP-6 Top View D (1, 2, 5, 6) D D 1 6 Marking Code 3 mm D D 5 2 G AG XX (3) Lot Tracea bility G S 3 4 and Date Code (4) Part Code S 2.85 mm N-Channel MOSFET Ordering Information: Si3424BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS a, b T = 25 C C 8 T = 70 C 6.7 C a I Continuous Drain Current (T = 150 C) D J c, d T = 25 C A A 7 c, d T = 70 C A 5.6 I Pulsed Drain Current 30 DM T = 25 C 2.48 C I Continuous Source-Drain Diode Current A S c, d T = 25 C A 1.74 T = 25 C 2.98 C T = 70 C 1.9 C a P W Maximum Power Dissipation D c, d T = 25 C A 2.1 c, d T = 70 C A 1.3 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s R 50 60 thJA c Maximum Junction-to-Ambient Steady State R 90 110 C/W thJA R Maximum Junction-to-Foot (Drain) Steady State 35 42 thJF Notes: a. Package limited. b. Based on T = 25 C. C c. Surface mounted on 1 x 1 FR4 board. d. t = 5 s. Document Number: 74623 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0631-Rev. E, 25-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Y Y Si3424BDV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 23.75 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T 5.8 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 13V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 85 C 10 DS GS J a I V = 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 7 A 0.0230 0.0280 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5.8 A 0.0315 0.0380 GS D g V = 15 V, I = 7 A Forward Transconductance 17 S fs DS D b Dynamic C Input Capacitance 735 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 130 pF oss DS GS C Reverse Transfer Capacitance 34 rss V = 15 V, V = 10 V, I = 7 A 13.05 19.6 DS GS D Q Total Gate Charge g 6.2 9.3 nC Q V = 24 V, V = 4.5 V, I = 7 A Gate-Source Charge 2.16 gs DS GS D Q Gate-Drain Charge 2.15 gd R Gate Resistance f = 1 MHz 2.45 3.7 g t Turn-On Delay Time 4.5 6.8 d(on) t V = 15 V, R = 2.7 Rise Time 10 15 r DD L t I 5.6 A, V = 10 V, R = 1 Turn-Off DelayTime 16 24 d(off) D GEN g t Fall Time 710.5 f ns t Turn-On Delay Time 18 27 d(on) t V = 15 V, R = 3.2 Rise Time 85 128 r DD L t I 4.7 A, V = 4.5 V, R = 1 Turn-Off DelayTime 17 26 d(off) D GEN g t Fall Time 12 18 f Drain-Source Body Diode Characteristics I T = 25 C Continous Source-Drain Diode Current 2.48 S C A a I 30 Pulse Diode Forward Current SM V I = 3 A Body Diode Voltage 0.8 1.2 V SD S t Body Diode Reverse Recovery Time 13.8 20.7 nC rr Q Body Diode Reverse Recovery Charge 6.21 9.32 rr I = 3.2 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 8.5 ns a t Reverse Recovery Rise Time 5.3 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 74623 2 S13-0631-Rev. E, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000