X-On Electronics has gained recognition as a prominent supplier of SI3407DV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3407DV-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3407DV-T1-GE3 Vishay

SI3407DV-T1-GE3 electronic component of Vishay
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Part No.SI3407DV-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -20V Vds 12V Vgs TSOP-6
Datasheet: SI3407DV-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5115 ea
Line Total: USD 0.51 
Availability - 56466
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 29
Multiples : 1
29 : USD 0.1807

5820
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1789
9000 : USD 0.1704

2673
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5091
10 : USD 0.4058
30 : USD 0.3598
100 : USD 0.3043
500 : USD 0.2794
1000 : USD 0.2641

56466
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5115
10 : USD 0.3498
100 : USD 0.2431
500 : USD 0.2167
1000 : USD 0.1837
3000 : USD 0.1639
9000 : USD 0.1573
24000 : USD 0.154
45000 : USD 0.1507

2703
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.532
25 : USD 0.434
50 : USD 0.3948
51 : USD 0.3402
139 : USD 0.322
500 : USD 0.3094

2910
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1902

5820
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1704

   
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We are delighted to provide the SI3407DV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3407DV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si3407DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) Definition DS DS(on) D g a TrenchFET Power MOSFET 0.0240 at V = - 4.5 V GS - 8 - 20 21 nC PWM Optimized a 0.0372 at V = - 2.5 V GS - 8 100 % R Tested g Available 100 % UIS Tested TSOP-6 Compliant to RoHS Directive 2002/95/EC Top View APPLICATIONS 1 6 (4) S Load Switch - Notebook PC 3 mm 5 2 3 4 (3) G Marking Code 07 XXX Lot Traceability 2.85 mm and Date Code Part Code Ordering Information: Si3407DV-T1-E3 (Lead (Pb)-free) Si3407DV-T1-GE3 (Lead (Pb)-free and Halogen-free) (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 12 GS a T = 25 C - 8 C a T = 70 C - 8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 7.5 A b, c T = 70 C - 6 A A Pulsed Drain Current I - 25 DM T = 25 C - 3.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.7 A Avalanche Current I - 8 AS L = 0.1 mH Single Pulse Avalanche Energy E 3.2 mJ AS T = 25 C 4.2 C T = 70 C 2.7 C Maximum Power Dissipation P W D b, c T = 25 C 2 A b, c T = 70 C 1.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 45 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 25 30 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 C/W. Document Number: 69987 www.vishay.com S09-2110-Rev. B, 12-Oct-09 1Si3407DV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V /T V Temperature Coefficient -18.7 DS J DS I = - 250 A mV/C D V /T V Temperature Coefficient 3.7 GS(th) J GS(th) V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.65 - 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 25 A D(on) DS GS V - 4.5 V, I = - 7.5 A 0.0200 0.0240 GS D a R Drain-Source On-State Resistance DS(on) V - 2.5 V, I = - 6.4 A 0.0310 0.0327 GS D a g V = - 10 V, I = - 7.5 A Forward Transconductance 25 S fs DS D b Dynamic Input Capacitance C 1670 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 335 pF oss DS GS Reverse Transfer Capacitance C 284 rss V = - 10 V, V = - 10 V, I = - 7.5 A 42 63 DS GS D Q Total Gate Charge g 21 32 nC Gate-Source Charge Q 6 V = - 10 V, V = - 4.5 V, I = - 7.5 A gs DS GS D Q Gate-Drain Charge 5 gd Gate Resistance R f = 1 MHz 1.3 6.5 13 g t Turn-on Delay Time 816 d(on) t Rise Time V = - 10 V, R = 1.7 11 17 r DD L I - 6 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 65 98 d(off) t Fall Time 39 59 f ns t Turn-on Delay Time 32 48 d(on) t Rise Time V = - 10 V, R = 1.7 62 93 r DD L I - 6 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 53 80 d(off) t Fall Time 38 57 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 3.5 S C A a I - 25 Pulse Diode Forward Current SM V I = - 6 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 37 56 ns rr Body Diode Reverse Recovery Charge Q 22 33 nC rr I = 6 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns Reverse Recovery Rise Time t 25 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69987 2 S09-2110-Rev. B, 12-Oct-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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