Si3407DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) Definition DS DS(on) D g a TrenchFET Power MOSFET 0.0240 at V = - 4.5 V GS - 8 - 20 21 nC PWM Optimized a 0.0372 at V = - 2.5 V GS - 8 100 % R Tested g Available 100 % UIS Tested TSOP-6 Compliant to RoHS Directive 2002/95/EC Top View APPLICATIONS 1 6 (4) S Load Switch - Notebook PC 3 mm 5 2 3 4 (3) G Marking Code 07 XXX Lot Traceability 2.85 mm and Date Code Part Code Ordering Information: Si3407DV-T1-E3 (Lead (Pb)-free) Si3407DV-T1-GE3 (Lead (Pb)-free and Halogen-free) (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 12 GS a T = 25 C - 8 C a T = 70 C - 8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 7.5 A b, c T = 70 C - 6 A A Pulsed Drain Current I - 25 DM T = 25 C - 3.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.7 A Avalanche Current I - 8 AS L = 0.1 mH Single Pulse Avalanche Energy E 3.2 mJ AS T = 25 C 4.2 C T = 70 C 2.7 C Maximum Power Dissipation P W D b, c T = 25 C 2 A b, c T = 70 C 1.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 45 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 25 30 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 C/W. Document Number: 69987 www.vishay.com S09-2110-Rev. B, 12-Oct-09 1Si3407DV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V /T V Temperature Coefficient -18.7 DS J DS I = - 250 A mV/C D V /T V Temperature Coefficient 3.7 GS(th) J GS(th) V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.65 - 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 25 A D(on) DS GS V - 4.5 V, I = - 7.5 A 0.0200 0.0240 GS D a R Drain-Source On-State Resistance DS(on) V - 2.5 V, I = - 6.4 A 0.0310 0.0327 GS D a g V = - 10 V, I = - 7.5 A Forward Transconductance 25 S fs DS D b Dynamic Input Capacitance C 1670 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 335 pF oss DS GS Reverse Transfer Capacitance C 284 rss V = - 10 V, V = - 10 V, I = - 7.5 A 42 63 DS GS D Q Total Gate Charge g 21 32 nC Gate-Source Charge Q 6 V = - 10 V, V = - 4.5 V, I = - 7.5 A gs DS GS D Q Gate-Drain Charge 5 gd Gate Resistance R f = 1 MHz 1.3 6.5 13 g t Turn-on Delay Time 816 d(on) t Rise Time V = - 10 V, R = 1.7 11 17 r DD L I - 6 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 65 98 d(off) t Fall Time 39 59 f ns t Turn-on Delay Time 32 48 d(on) t Rise Time V = - 10 V, R = 1.7 62 93 r DD L I - 6 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 53 80 d(off) t Fall Time 38 57 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 3.5 S C A a I - 25 Pulse Diode Forward Current SM V I = - 6 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 37 56 ns rr Body Diode Reverse Recovery Charge Q 22 33 nC rr I = 6 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns Reverse Recovery Rise Time t 25 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69987 2 S09-2110-Rev. B, 12-Oct-09