Si2351DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free Option Available a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.115 at V = - 4.5 V - 3.0 GS PWM Optimized RoHS - 20 3.2 nC COMPLIANT 100 % R Tested 0.205 at V = - 2.5 V - 2.2 GS g TO-236 (SOT-23) G 1 3 D S 2 Top View Si2351DS (G1)* * Marking Code Ordering Information: Si2351DS-T1-E3 (Lead (Pb)-free) Si2351DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V - 20 Drain-Source Voltage DS V V 12 Gate-Source Voltage GS T = 25 C - 2.8 C T = 70 C - 2.4 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 2.2 b, c T = 70 C A A - 1.8 I - 10 Pulsed Drain Current DM T = 25 C - 2.0 C Continuous Source-Drain Diode Current I S b, c T = 25 C A - 0.91 T = 25 C 2.1 C T = 70 C 1.5 C P Maximum Power Dissipation W D b, c T = 25 C A 1.0 b, c T = 70 C A 0.7 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d 5 s R 90 115 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Foot (Drain) 60 75 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 130 C/W. Document Number: 73702 www.vishay.com S-80642-Rev. C, 24-Mar-08 1Si2351DS Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS DS D V Temperature Coefficient V /T - 16.7 DS DS J mV/C I = - 250 A D V Temperature Coefficient V /T 2.1 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.6 - 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 10 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 2.4 A 0.092 0.115 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 1.8 A 0.164 0.205 GS D a g V = - 10 V, I = - 2.4 A 5.5 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 250 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 80 pF oss DS GS Reverse Transfer Capacitance C 55 rss V = - 10 V, V = - 5.0 V, I = - 2.4 A 3.4 5.1 DS GS D Q Total Gate Charge g 3.2 5 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 2.4 A 0.5 gs DS GS D Q Gate-Drain Charge 1.4 gd R Gate Resistance f = 1 MHz 8.5 13 g t Turn-On Delay Time 914 d(on) t Rise Time V = - 10 V, R = 5.26 30 45 r DD L ns I - 1.9 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN G 32 48 d(off) t Fall Time 16 24 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 2.0 S C A a I - 10 Pulse Diode Forward Current SM V I = - 2.0 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 17 26 ns rr Q Body Diode Reverse Recovery Charge 58 nC rr I = - 2.0 A, di/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 14 a ns t Reverse Recovery Rise Time 3 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73702 2 S-80642-Rev. C, 24-Mar-08