X-On Electronics has gained recognition as a prominent supplier of Si2333CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. Si2333CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Si2333CDS-T1-GE3 Vishay

Si2333CDS-T1-GE3 electronic component of Vishay
Si2333CDS-T1-GE3 Vishay
Si2333CDS-T1-GE3 MOSFETs
Si2333CDS-T1-GE3  Semiconductors

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See Product Specifications
Part No. Si2333CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: Si2333CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3162 ea
Line Total: USD 1.58 
Availability - 2900
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2910
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.3375

2900
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.3162
50 : USD 0.2522
150 : USD 0.1928
500 : USD 0.147
3000 : USD 0.1191
6000 : USD 0.1121

29893
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.9187
10 : USD 0.6687
100 : USD 0.4114
500 : USD 0.352
1000 : USD 0.3091
3000 : USD 0.2607
24000 : USD 0.2541

972
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7
10 : USD 0.6104
25 : USD 0.5404
79 : USD 0.2212
216 : USD 0.2086

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
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We are delighted to provide the Si2333CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Si2333CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Si2333CDS-T1-GE3 is a P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236) manufactured by Vishay. It is a low-voltage, low-current, general-purpose MOSFET designed for use in low-noise switch-mode applications and power management solutions. It has a low input capacitance that allows for fast switching operations. It also features a low on-state resistance for improved efficiency, and its temperature-compensated threshold voltage helps maintain low gate-to-source voltage. The package allows it to be mounted directly to printed circuit boards and its lead form permits a low-profile solution.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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