NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS NDD02N40, NDT02N40 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V =0V, I =1mA 400 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T Reference to 25C, 460 mV/C (BR)DSS J Temperature Coefficient I = 1 mA D DraintoSource Leakage Current I V = 400 V, V =0V T =25C 1 A DSS DS GS J T = 125C 50 J GatetoSource Leakage Current I V = 20 V 10 A GSS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V =V , I = 250 A 0.8 1.6 2 V GS(TH) DS GS D Negative Threshold Temperature Co- V /T Reference to 25C, I = 50 A 4.6 mV/C GS(TH) J D efficient Static Drain-to-Source On Resistance R V =10V, I = 0.22 A 4.5 5.5 DS(on) GS D Forward Transconductance g V =15V, I = 0.22 A 1.1 S FS DS D DYNAMIC CHARACTERISTICS Input Capacitance (Note 7) C 121 pF iss Output Capacitance (Note 7) C 16 oss V =25V, V = 0 V, f = 1 MHz DS GS Reverse Transfer Capacitance C 3 rss (Note 7) Total Gate Charge (Note 7) Q 5.5 nC g Gate-to-Source Charge (Note 7) Q 0.8 gs V = 200 V, I = 1.7 A, V =10V DS D GS Gate-to-Drain (Miller) Charge Q 1.0 gd (Note 7) Plateau Voltage V 3.1 V GP Gate Resistance R 8.7 g RESISTIVE SWITCHING CHARACTERISTICS (Note 8) Turn-on Delay Time t 5 ns d(on) Rise Time t 7 r V = 200 V, I = 1.7 A, DD D V =10V, R = 0 GS G Turn-off Delay Time t 14 d(off) Fall Time t 4 f SOURCEDRAIN DIODE CHARACTERISTICS Diode Forward Voltage V T =25C 0.9 1.6 V SD J I = 1.7 A, V =0V S GS T = 100C 0.8 J Reverse Recovery Time t 146 ns rr Charge Time t 37 a V =0V, V = 30 V, I = 1.7 A, GS DD S d /d = 100 A/ s i t Discharge Time t 109 b Reverse Recovery Charge Q 260 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Width 380 s, Duty Cycle 2%. 7. Guaranteed by design. 8. Switching characteristics are independent of operating junction temperatures.