Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available b V (V) R ( ) I (A) DS DS(on) D Pb-free 0.200 at V = - 10 V Available - 1.64 GS - 30 0.380 at V = - 4.5 V RoHS* - 1.0 GS COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free) Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 1.64 - 1.49 A b I Continuous Drain Current (T = 150 C) D J T = 70 C - 1.31 - 1.2 A A a I - 10 Pulsed Drain Current DM b I - 0.75 - 0.6 Continuous Source Current (Diode Conduction) S T = 25 C 0.9 0.7 A b P W Power Dissipation D T = 70 C 0.57 0.45 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b 120 145 Maximum Junction-to-Ambient R C/W thJA c 140 175 Maximum Junction-to-Ambient Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t 5 s. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: Si2303BDS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Unit Min. Typ. Max. Static V V = 0 V, I = - 10 A Drain-Source Breakdown Voltage - 30 (BR)DSS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 1.0 - 3.0 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 6 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 1.7 A 0.150 0.200 GS D a R Drain-Source On-Resistance DS(on) V = - 4.5 V, I = - 1.3 A 0.285 0.380 GS D a g V = - 5 V, I = - 1.7 A 2.0 S Forward Transconductance fs DS D V I = - 0.75 A, V = 0 V Diode Forward Voltage - 0.85 - 1.2 V SD S GS b Dynamic Total Gate Charge Q 4.3 10 g Q V = - 15 V, V = - 10 V, I - 1.7 A Gate-Source Charge 0.8 nC gs DS GS D Gate-Drain Charge Q 1.3 gd C Input Capacitance 180 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 50 pF oss DS GS C Reverse Transfer Capacitance 35 rss c Switching t 55 80 d(on) Turn-On Time V = - 15 V, R = 15 DD L t 40 60 r I - 1.0 A, V = - 4.5 V ns D GEN t 10 20 d(off) R = 6 G Turn-Off Time t 10 20 f Notes: a. Pulse test: PW 300 s, duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72065 2 S-80642-Rev. C, 24-Mar-08