X-On Electronics has gained recognition as a prominent supplier of Si2305CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. Si2305CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Si2305CDS-T1-GE3 Vishay

Si2305CDS-T1-GE3 electronic component of Vishay
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Part No.Si2305CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: mosfet p trench 8v 5.8a 1v @ 250ua 35 m @ 4.4a,4.5v sot-23 (sot-23-3) rohs
Datasheet: Si2305CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1353 ea
Line Total: USD 0.68 
Availability - 52595
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
37
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.637
10 : USD 0.3924
25 : USD 0.204

5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1467
6000 : USD 0.1339
12000 : USD 0.1266
18000 : USD 0.1217
30000 : USD 0.1209

75660
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1071
9000 : USD 0.1071
12000 : USD 0.1071
30000 : USD 0.1071
45000 : USD 0.1071

52595
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1353
50 : USD 0.1087
150 : USD 0.0953
500 : USD 0.0853
3000 : USD 0.0741
6000 : USD 0.0702

48
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3155
10 : USD 0.2577
30 : USD 0.2288
100 : USD 0.2
500 : USD 0.1826
1000 : USD 0.1741

72490
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4554
10 : USD 0.2904
100 : USD 0.165
1000 : USD 0.1496
3000 : USD 0.1199
9000 : USD 0.1078
24000 : USD 0.1078
45000 : USD 0.1023

2589
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.504
10 : USD 0.3416
50 : USD 0.2926
95 : USD 0.1806
261 : USD 0.1708

43650
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1831
24000 : USD 0.1673
36000 : USD 0.1557

5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1467
6000 : USD 0.1339
12000 : USD 0.1266
18000 : USD 0.1217
30000 : USD 0.1209

11640
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1391
6000 : USD 0.1268

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
LoadingGif
 
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We are delighted to provide the Si2305CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Si2305CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Si2305CDS-T1-GE3 by Vishay is a small signal MOSFET (metal oxide semiconductor field effect transistor) in a 3-pin SOT-23 package. It is RoHS compliant and offers a maximum drain-to-source voltage (VDS) of 8V, a maximum drain current (ID) of 5.8A, a maximum gate-to-source voltage (VGS) of 1V, a threshold voltage of 250µA, and a maximum on-state resistance of 35 mOhms at a gate-to-source voltage of 4.4V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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