X-On Electronics has gained recognition as a prominent supplier of SI2305CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2305CDS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2305CDS-T1-GE3 VBsemi Elec

Name: SI2305CDS-T1-GE3
Brand: VBsemi Elec
SKU: SI2305CDST1GE3_VBsemi Elec
Availability: InStock
Rating: 5 (11 reviews)

SI2305CDS-T1-GE3 electronic component of VBsemi Elec

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See Product Specifications

Part No.	SI2305CDS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	20V 5A 35mO@10V,5.1A 2.5W P Channel SOT-23-3 MOSFETs ROHS
Datasheet:	SI2305CDS-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0807 ea
Line Total: USD 0.81

Availability - 937
Ship by Tue. 14 Jan to Fri. 17 Jan

MOQ: 10 Multiples: 10
Pack Size: 10

SI2305CDS-T1-GE3 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

937

Ship by Tue. 14 Jan to Fri. 17 Jan

MOQ : 10
Multiples : 10

10 : USD 0.0807
100 : USD 0.0668
300 : USD 0.0597
3000 : USD 0.0471
6000 : USD 0.0429
9000 : USD 0.0407

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT23 - 3 SOT23 - 3

Brand Category

Vbsemi Elec Vbsemi Elec

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

5 A 5 A

Drain Source On Resistance Rdson@Vgs Id

35 mOhms @10V , 5.1A 35 mOhms @10V , 5.1A

Power Dissipation Pd

2.5 W 2.5 W

Gate Threshold Voltage Vgsth@Id

1.5 V @250uA 1.5 V @250uA

Reverse Transfer Capacitance Crss@Vds

155 pF @10V 155 pF @10V

Type

P Channel P Channel

Input Capacitance Ciss@Vds

835 pF @10V 835 pF @10V

Total Gate Charge Qg@Vgs

6.4 nC @2.5V 6.4 nC @2.5V

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

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We are delighted to provide the SI2305CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2305CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBsemi Elec SI2305CDS-T1-GE3 is an RoHS compliant P Channel SOT-23-3 MOSFET that is capable of supporting up to 20V with a current of 5A, and deliver 35mO at a voltage of 10V. It features a maximum power dissipation of 2.5W and a continuous drain to source current of 5.1A. This device is suitable for applications such as small, low power DC to DC converters and onboard switching regulaotrs.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
937 Ship by Tue. 14 Jan to Fri. 17 Jan MOQ : 10 Multiples : 10	10 : USD 0.0807 100 : USD 0.0668 300 : USD 0.0597 3000 : USD 0.0471 6000 : USD 0.0429 9000 : USD 0.0407

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