X-On Electronics has gained recognition as a prominent supplier of SI2312CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2312CDS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2312CDS-T1-GE3 VBsemi Elec

Name: SI2312CDS-T1-GE3
Brand: VBsemi Elec
SKU: SI2312CDST1GE3_VBsemi Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

SI2312CDS-T1-GE3 electronic component of VBsemi Elec

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See Product Specifications

Part No.	SI2312CDS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	20V 6A 2.1W 28mO@4.5V,5A N Channel SOT-23 MOSFETs ROHS
Datasheet:	SI2312CDS-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0481 ea
Line Total: USD 0.48

Availability - 0

MOQ: 10 Multiples: 10
Pack Size: 10

SI2312CDS-T1-GE3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 10 Multiples : 10	10 : USD 0.0481 100 : USD 0.0471 300 : USD 0.0464 1000 : USD 0.0458

Specifications

Manufacturer VBsemi Elec VBsemi Elec
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package SOT23 - 3 SOT23 - 3
Brand Category Vbsemi Elec Vbsemi Elec
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 6 A 6 A
Power Dissipation Pd 2.1 W 2.1 W
Drain Source On Resistance Rdson@Vgs Id 28 mOhms @4.5V , 5A 28 mOhms @4.5V , 5A
Gate Threshold Voltage Vgsth@Id 1 V @250uA 1 V @250uA
Type N Channel N Channel

SI2312CDS-T1-GE3 Alternative Parts

Image	Part-Description
Hot	SI2312CDS-T1-GE3 MOSFET 20V Vds 8V Vgs SOT-23 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges. Stock: 455

We are delighted to provide the SI2312CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2312CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2312CDS-T1-GE3 is a MOSFET manufactured by VBsemi Elec in a SOT-23 package with a maximum rating of 20V 6A 2.1W 28mO@4.5V,5A. It is a N channel MOSFET which complies with ROHS regulations. It has a gate voltage of 4.5V, a maximum operating temperature of 175°C. This device is ideal for applications where large amounts of power need to be effectively switched. It is well suited for use in applications such as DC-DC converters, power management, and motor drivers.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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