X-On Electronics has gained recognition as a prominent supplier of Si2338DS-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. Si2338DS-T1-GE3 MOSFET are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

Si2338DS-T1-GE3 VBsemi Elec

Si2338DS-T1-GE3 electronic component of VBsemi Elec
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See Product Specifications
Part No.Si2338DS-T1-GE3
Manufacturer: VBsemi Elec
Category: MOSFET
Description: 30V 6.5A 1.7W 30mO@10V,3.2A N Channel SOT-23 MOSFETs ROHS
Datasheet: Si2338DS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.0666 ea
Line Total: USD 0.33

Availability - 92
Ship by Mon. 12 Aug to Thu. 15 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
92
Ship by Mon. 12 Aug to Thu. 15 Aug
MOQ : 5
Multiples : 5
5 : USD 0.0686
50 : USD 0.067
150 : USD 0.066
500 : USD 0.065

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
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We are delighted to provide the Si2338DS-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Si2338DS-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The Si2338DS-T1-GE3 is a 30V 6.5A 1.7W 30mO@10V,3.2A N Channel SOT-23 MOSFET manufactured by VBsemi Elec (VBE). It is a metal-oxide-semiconductor field effect transistor designed for surface mount technology and is RoHS compliant. It features a drain-source voltage rating of 30V and a drain current rating of 6.5A, making it suitable for many applications such as high-frequency switching, motor controls, and consumer electronics. The on-state resistance is 30 mO@10V and 3.2A. This product is also UL approved and meets the requirements of the Restrictions of Hazardous Substances (RoHS) Directive.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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