X-On Electronics has gained recognition as a prominent supplier of SI3477DV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3477DV-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3477DV-T1-GE3 VBsemi Elec

SI3477DV-T1-GE3 electronic component of VBsemi Elec
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Part No.SI3477DV-T1-GE3
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: 30V 4.8A 55mO@10V,4.1A 3W P Channel SOT-23-6 MOSFETs ROHS
Datasheet: SI3477DV-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1648 ea
Line Total: USD 0.82 
Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1648
50 : USD 0.1615
150 : USD 0.1591
500 : USD 0.1567

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI3477DV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3477DV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI3477DV-T1-GE3 is a P-channel MOSFET, a type of transistor, manufactured by VBsemi Elec and designed for use in low-voltage applications such as power management, low-side switching, and battery protection. It has a maximum drain-source voltage (VDS) rating of 30V, a drain current rating of 4.8A, and a channel resistance (Ron) of 55mO@10V, 4.1A 3W. The MOSFET comes in an SOT-23-6 package and is compliant with RoHS regulations.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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